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PDF HFP75N08 Data sheet ( Hoja de datos )
| Número de pieza | HFP75N08 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Shantou Huashan Electronic | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONSL
Low Voltage high-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg
Tj
PD
VDSS
VGSS
ID
Storage Temperature
Operating Junction Temperature
Allowable Power Dissipation Tc=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current Tc=25
-55~175
150
173W
80V
±20V
75A
N-Channel MOSFET
HFP75N08
TO-220
1G
2D
3S
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Characteristics
Min Typ Max
DataSheet4U.com
Drain-Source Breakdown Voltage 80
Unit Test Conditions
V ID=250 A ,VGS=0V
Zero Gate Voltage Drain Current
10 A VDS = 80V VGS=0
Gate –Source Leakage Current
Gate Threshold Voltage
2.0
100 nA VGS= 20V , VDS =0V
4.0 V VDS = VGS , ID =250 A
Static Drain-Source On-Resistance
0.011 0.014 Ω VGS=10V, ID =37.5A
Input Capacitance
2600 3380 pF
DataShee
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
940 1220 pF
210 275 pF
VDS =25V, VGS=0,f=1MHz
td(on) Turn - On Delay Time
30 70 nS
tr
td(off)
tf
Qg
Rise Time
Turn - Off Delay Time
Fall Time
Total Gate Charge
225 460 nS
165 340 nS
155 320 nS
80 105 nC
VDD =40V, ID =75A
RG= 25 *
VDS =48V
Qgs Gate–Source Charge
15 nC VGS=10V
Qgd Gate–Drain Charge
32 nC ID=50A*
Is Continuous Source Current
75 A
VSD Diode Forward Voltage
Rth j-c
Thermal Resistance
Junction-to-Case
DataSh*ePeut4lsUe.cToemst Pulse Width 300 s
Duty Cycle
2%
1.5
0.87
V IS =75A , VGS=0
/W
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Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFP75N08
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HFP75N08.PDF ] | |
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