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IRLZ24NSPBFのメーカーはInternational Rectifierです、この部品の機能は「(IRLZ24NSPBF / IRLZ24NLPBF) Power MOSFET」です。 |
部品番号 | IRLZ24NSPBF |
| |
部品説明 | (IRLZ24NSPBF / IRLZ24NLPBF) Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLZ24NSPBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
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l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ24NS)
l Low-profile through-hole (IRLZ24NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
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its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ24NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
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Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 95584
IRLZ24NSPbF
IRLZ24NLPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.06Ω
ID = 18A
S
D 2 Pak
TO-262
Max.
18
13
72
3.8
45
0.30
±16
68
11
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
Max.
3.3
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/20/04
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100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
IRLZ24NS/LPbF
100
10
VGS
TOP
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
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2.5V
11
0.1
0.1
2.5V
20µs PULSE WIDTH
TJ = 25°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
0.1
0.1
20µs PULSE WIDTH
TJ = 175°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
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100
TJ = 25°C
TJ = 175°C
10
1
V DS= 15V
20µs PULSE WIDTH
0.1 A
2 3 4 5 6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0
ID = 18A
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRLZ24NS/LPbF
VDS
RG
5.0 V
tp
L
D.U.T.
IAS
0.01Ω
+
- VDD
140
120
100
80
60
TOP
BOTTOM
ID
4.5A
7.8A
11A
Fig 12a. Unclamped Inductive Test Circuit
40
V(BR)DSS
tp
VDD
20
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction Temperature (°C)
VDS
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IAS
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
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6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ IRLZ24NSPBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRLZ24NSPBF | (IRLZ24NSPBF / IRLZ24NLPBF) Power MOSFET | International Rectifier |