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Número de pieza | MRF20060R | |
Descripción | RF POWER BIPOLAR TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron Bipolar Line
RF Power Bipolar Transistors
The MRF20060R and MRF20060RS are designed for class AB broadband
commercial and industrial applications at frequencies from 1800 to 2000 MHz.
The high gain, excellent linearity and broadband performance of these devices
make them ideal for large–signal, common emitter class AB amplifier applica-
tions. These devices are suitable for frequency modulated, amplitude modulated
and multi–carrier base station RF power amplifiers.
• Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9 dB
Efficiency — 33%
Intermodulation Distortion — –30 dBc
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)
Output Power
• Designed for FM, TDMA, CDMA and Multi–Carrier Applications
• Test Fixtures Available at: http://mot–sps.com/rf/designtds/
Note: Not suitable for class A operation.
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Order this document
by MRF20060R/D
MRF20060R
MRF20060RS
60 W, 2000 MHz
RF POWER
BROADBAND
NPN BIPOLAR
CASE 451–06, STYLE 1
(MRF20060R)
DataShee
CASE 451A–03, STYLE 1
(MRF20060RS)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage (IB = 0 mA)
Collector–Emitter Voltage
Collector–Base Voltage
Collector–Emitter Voltage (RBE = 100 Ohm)
Base–Emitter Voltage
Collector Current – Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
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REV 3
MMoOtoTroOla,RInOc.L2A00R0 F DEVICE DATA
DataSheet4 U .com
Symbol
VCEO
VCES
VCBO
VCER
VEB
IC
PD
Tstg
TJ
Symbol
RθJC
Value
25
60
60
30
–3
8
250
1.43
– 65 to +150
200
Max
0.7
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
MRF20060R MRF20060RS
1
1 page www.DataSheet4U.com
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10 Pout = 60 W (PEP)
VCC = 26 Vdc
ICQ = 200 mA
9.5
38
Gpe
36
9
η
34
8.5
VSWR
32
8
1900
1920
1940
28
1960 1980 2000
f, FREQUENCY MHz)
Figure 8. Performance in Broadband Circuit
1.3:1
1.2:1
1.1:1
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
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1.E+05
0
50 100 150 200 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTBF in hours x ampere2
emitter curent. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by IC2 for MTBF in a particular application.
Figure 9. MTBF Factor versus
Junction Temperature
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MOTOROLA RF DEVICE DATA
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MRF20060R MRF20060RS
5
5 Page www.DataSheet4U.com
R
K
HE
PACKAGE DIMENSIONS
G
1
2
D
3
–B–
Q 2 PL
0.25 (0.010) M T A M B M
NF
C
–T–
SEATING
PLANE
–A– CASE 451–06
ISSUE F
(MRF20060R)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030" AWAY FROM
FLANGE.
INCHES
DIM MIN MAX
A 0.995 1.005
B 0.380 0.390
C 0.156 0.191
D 0.455 0.465
E 0.060 0.075
F 0.004 0.006
G 0.800 BSC
H 0.078 0.090
K 0.117 0.137
N 0.595 0.605
Q 0.120 0.130
R 0.395 0.410
MILLIMETERS
MIN MAX
25.27 25.53
9.65 9.91
3.96 4.85
11.56 11.81
1.52 1.91
0.10 0.15
20.32 BSC
1.98 2.29
2.97 3.48
15.11 15.37
3.05 3.30
10.03 10.41
STYLE 1:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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K
HE
1
2
D
N
–A–
–B–
F
C
3
DataSheet4U.com
–T–
SEATING
PLANE
CASE 451A–03
ISSUE B
(MRF20060RS)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030" AWAY FROM
FLANGE.
INCHES
DIM MIN MAX
A 0.615 0.625
B 0.395 0.410
C 0.156 0.191
D 0.455 0.465
E 0.060 0.075
F 0.004 0.006
H 0.078 0.090
K 0.117 0.137
N 0.595 0.605
MILLIMETERS
MIN MAX
15.62 15.88
10.03 10.41
3.96 4.85
11.56 11.81
1.52 1.91
0.10 0.15
1.98 2.29
2.97 3.48
15.11 15.37
STYLE 1:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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MOTOROLA RF DEVICE DATA
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MRF20060R MRF20060RS
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet MRF20060R.PDF ] |
Número de pieza | Descripción | Fabricantes |
MRF20060 | RF POWER BROADBAND NPN BIPOLAR | Motorola Semiconductors |
MRF20060R | RF POWER BIPOLAR TRANSISTOR | Motorola Semiconductors |
MRF20060RS | RF POWER BIPOLAR TRANSISTOR | Motorola Semiconductors |
MRF20060S | RF POWER BROADBAND NPN BIPOLAR | Motorola Semiconductors |
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