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PDF IS93C46D Data sheet ( Hoja de datos )
| Número de pieza | IS93C46D | |
| Descripción | 1024-BIT SERIAL ELECTRICALLY ERASABLE PROM | |
| Fabricantes | ISSI | |
| Logotipo |  |
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IS93C46D
ISSI ®
1-KBIT SERIAL ELECTRICALLY
ERASABLE PROM
ADVANCED INFORMATION
NOVEMBER 2005
FEATURES
DESCRIPTION
• Industry-standard Microwire Interface
— Non-volatile data storage
— Wide voltage operation:
Vcc = 1.8V to 5.5V
— Full TTL compatible inputs and outputs
— Auto increment for efficient data dump
• User Configured Memory Organization
— By 16-bit or by 8-bit
The IS93C46D is a 1Kb non-volatile, ISSI ® serial
EEPROM. It is fabricated using an enhanced
CMOS design and process. The IS93C46D
contains power-efficient read/write memory, and
organization of 128 bytes of 8 bits or 64 words of
16 bits. When the ORG pin is connected to Vcc
or left unconnected, x16 is selected; when it is
connected to ground, x8 is selected.
• Hardware and software write protection
— Defaults to write-disabled state at power-up
— Software instructions for write-enable/disable
• Enhanced low voltage CMOS E2PROM
technology
An instruction set defines the operation of the
devices, including read, write, and mode-enable
functions. To protect against inadvertent data
modification, all erase and write instructions are
accepted only while the device is write-enabled. A
• Versatile, easy-to-use Interface
selected x8 byte or x16 word can be modified with
— Self-timed programming cycle
a single WRITE or ERASE instruction.
— Automatic erase-before-write
— Programming status indicator
— Word and chip erasable
— Chip select enables power savings
• Durable and reliable
Additionally, the two instructions WRITE ALL or
ERASE ALL can program the entire array. Once DataShee
DataSheet4U.atchodemedvaictae
begins
out pin
its self-timed program procedure,
(Dout) can indicate the READY/
BUSY status by raising chip select (CS). The self-
— 40-year data retention after 1M write cycles
timed write cycle includes an automatic erase-
— 1 million write cycles
before-write capability. The device can output any
— Unlimited read cycles
number of consecutive bytes/words using a single
— Schmitt-trigger inputs
READ instruction.
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DIN
INSTRUCTION
REGISTER
CS
SK
INSTRUCTION
DECODE,
CONTROL,
AND
CLOCK
GENERATION
DATA
REGISTER
ADDRESS
REGISTER
WRITE
ENABLE
DUMMY
BIT
R/W
AMPS
ADDRESS
DECODER
HIGH VOLTAGE
GENERATOR
DOUT
EEPROM
ARRAY
128x8
64x16
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
DataSheet4Uob.tcaoinmthe latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00E
10/25/05
DataSheet4 U .com
1
1 page  
www.DataSheet4U.com
IS93C46D
ISSI ®
DC ELECTRICAL CHARACTERISTICS
TA = –40°C to +85°C for Industrial and –40°C to +125°C for Automotive.
Symbol Parameter
Test Conditions
Vcc
Min.
Max. Unit
VOL2
Output LOW Voltage IOL = 100 µA
1.8V to 2.7V
—
0.2 V
VOL1
Output LOW Voltage IOL = 2.1mA
2.7V to 5.5V
—
0.4 V
VOH2
Output HIGH Voltage IOH = –100 µA
1.8V to 2.7V VCC – 0.2 — V
VOH1
Output HIGH Voltage IOH = –400 µA
2.7V to 5.5V
2.4
—V
VIH Input HIGH Voltage
1.8V to 2.7V
2.7V to 5.5V
0.7XVCC
2.0
VCC+1
VCC+1
V
VIL Input LOW Voltage
1.8V to 2.7V
–0.3
0.2XVCC V
2.7V to 5.5V
–0.3
0.8
ILI Input Leakage
VIN = 0V to VCC (CS, SK,DIN,ORG)
0 2.5 µA
ILO Output Leakage
VOUT = 0V to VCC, CS = 0V
0 2.5 µA
Notes:
Automotive grade devices in this table are tested with Vcc = 2.5V to 5.5V and 4.5V to 5.5V. An operation with Vcc <2.5V is not specified.
et4U.com POWER SUPPLY CHARACTERISTICS
TA = –40°C to +85°C for Industrial, –40°C to +12D5a°CtaSfohreAetu4tUom.cootmive.
Symbol
ICC1
ICC2
ISB1
ISB2
Parameter
Vcc Read Supply Current
Vcc Write Supply Current
Standby Current
Standby Current
Test Conditions
CS = VIH, SK = 1 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = VIH, SK = 1 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = GND, SK = GND
ORG = Vcc or Floating (x16)
DIN = Vcc or GND
CS = GND, SK = GND
ORG = GND (x8)
DIN = Vcc or GND
DataShee
Vcc
1.8V
2.5V
5.0V
1.8V
2.5V
5.0V
1.8V
2.5V
5.0V
1.8V
2.5V
5.0V
Min. Typ. Max.
— 0.1
— 0.2
— 0.5
1
1
2
— 0.5
—1
—2
1
2
3
— 0.1
— 0.1
— 0.2
1
2
4
— 6 10
— 6 10
— 10 15
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
DataSheet4U.com
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00E
10/25/05
DataSheet4 U .com
5
5 Page 
www.DataSheet4U.com
IS93C46D
ISSI ®
AC WAVEFORMS
FIGURE 8. ERASE (REGISTER ERASE) CYCLE TIMING
tCS
CS
DIN
11 1
An An-1
A0
DOUT
tSV
BUSY
tWP
READY
tDF
et4U.com
Notes:
To determine
data
bits
An
-
A0,
see
Instruction
Set
DfoarttahSehaepeptr4oUpr.icaotemdevice.
FIGURE 9. ERASE ALL (ERAL) CYCLE TIMING
DataShee
CS
DIN
DOUT
1 00 1 0
tCS
tSV
BUSY
tWP
READY
tDF
Note for Figures 8 and 9:
After the completion of the instruction (DOUT is in READY status) then it may perform another instruction. If device is in BUSY status
DataSheet4U(D.cOoUTmindicates BUSY status) then attempting to perform another instruction could cause device malfunction.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00E
10/25/05
DataSheet4 U .com
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