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PDF IS93C46B Data sheet ( Hoja de datos )
| Número de pieza | IS93C46B | |
| Descripción | 1024-BIT SERIAL ELECTRICALLY ERASABLE PROM | |
| Fabricantes | ISSI | |
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IS93C46B
ISSI ®
1,024-BIT SERIAL ELECTRICALLY
ERASABLE PROM
JULY 2003
FEATURES
DESCRIPTION
• Industry-standard Microwire Interface
The IS93C46B is a low-cost 1kb non-volatile,
— Non-volatile data storage
ISSI ® serial EEPROM. It is fabricated using an
— Low voltage operation:
enhanced CMOS design and process. The
Vcc = 2.5V to 5.5V
IS93C46B contains power-efficient read/write
— Full TTL compatible inputs and outputs
memory, and organization of 64 words of 16 bits.
— Auto increment for efficient data dump
The IS93C46B is fully backward compatible with
• x16 bit organization
IS93C46.
• Hardware and software write protection
— Defaults to write-disabled state at power-up
— Software instructions for write-enable/disable
• Enhanced low voltage CMOS E2PROM
technology
An instruction set defines the operation of the
devices, including read, write, and mode-enable
functions. To protect against inadvertent data
modification, all erase and write instructions are
accepted only while the device is write-enabled. A
• Versatile, easy-to-use Interface
selected x16 word can be modified with a single
— Self-timed programming cycle
WRITE or ERASE instruction. Additionally, the
— Automatic erase-before-write
two instructions WRITE ALL or ERASE ALL can
— Programming status indicator
— Word and chip erasable
program the entire array. Once a device begins
its self-timed program procedure, the data out pinDataShee
— Chip select enables power savings
• Durable and reliable
DataSheet4U.(cDomout) can indicate the READY/BUSY status by
raising chip select (CS). The self-timed write cycle
— 40-year data retention after 1M write cycles
includes an automatic erase-before-write
— 1 million write cycles
capability. The device can output any number of
— Unlimited read cycles
consecutive words using a single READ
— Schmitt-trigger inputs
instruction.
• Industrial and Automotive Temperature Grade
FUNCTIONAL BLOCK DIAGRAM
DIN
INSTRUCTION
REGISTER
CS
SK
INSTRUCTION
DECODE,
CONTROL,
AND
CLOCK
GENERATION
DATA
REGISTER
ADDRESS
REGISTER
WRITE
ENABLE
DUMMY
BIT
R/W
AMPS
ADDRESS
DECODER
HIGH VOLTAGE
GENERATOR
DOUT
EEPROM
ARRAY
64x16
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
DataSheet4Uob.tcaoinmthe latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
07/23/03
DataSheet4 U .com
1
1 page  
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IS93C46B
ISSI ®
DC ELECTRICAL CHARACTERISTICS
TA = 0°C to +70°C for Commercial, –40°C to +85°C for Industrial, and –40°C to +125°C for Automotive.
Symbol Parameter
Test Conditions
Vcc
VOL Output LOW Voltage IOL = 100 µA
2.5V to 5.5V
VOL1
Output LOW Voltage IOL = 2.1 mA
4.5V to 5.5V
VOH Output HIGH Voltage IOH = –100 µA
2.5V to 5.5V
VOH1
Output HIGH Voltage IOH = –400 µA
4.5V to 5.5V
VIH Input HIGH Voltage
2.5V to 5.5V
4.5V to 5.5V
VIL Input LOW Voltage
2.5V to 5.5V
4.5V to 5.5V
ILI Input Leakage
VIN = 0V to VCC (CS, SK,DIN,ORG)
ILO Output Leakage
VOUT = 0V to VCC, CS = 0V
Notes:
Automotive grade devices in this table are tested with Vcc = 2.7V to 5.5V and 4.5V to 5.5V.
Min.
—
—
VCC – 0.2
2.4
0.7XVCC
0.7XVCC
–0.3
–0.3
0
0
Max.
0.2
0.4
—
—
VCC+1
VCC+1
0.2XVCC
0.8
2.5
2.5
Unit
V
V
V
V
V
V
µA
µA
et4U.com
DataSheet4U.com
DataShee
DataSheet4U.com
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
07/23/03
DataSheet4 U .com
5
5 Page 
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IS93C46B
ISSI ®
AC WAVEFORMS
FIGURE 6. WRITE ALL (WRALL) TIMING
tCS
CS
DIN
DOUT
10 0 0 1
Dm D0
tSV
BUSY READY
tWP
et4U.com
DataShee
Notes:
1. After
the
completion
of
the
instruction
(DOUT
is
in
DataSheet4U.com
READY status) then it may
perform
another
instruction.
If
device
is
in
BUSY
status
(DOUT indicates BUSY status) then attempting to perform another instruction could cause device malfunction.
2. To determine data bits Dm-D0, see Instruction Set.
FIGURE 7. WRITE DISABLE (WDS) CYCLE TIMING
CS
DIN 1 0 0 0 0
DOUT = 3-STATE
tCS
DataSheet4U.com
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
07/23/03
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