DataSheet.jp

IRF40N03 の電気的特性と機能

IRF40N03のメーカーはETCです、この部品の機能は「N-CHANNEL Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF40N03
部品説明 N-CHANNEL Power MOSFET
メーカ ETC
ロゴ ETC ロゴ 




このページの下部にプレビューとIRF40N03ダウンロード(pdfファイル)リンクがあります。
Total 4 pages

No Preview Available !

IRF40N03 Datasheet, IRF40N03 PDF,ピン配置, 機能
www.DataSheet4U.com
ORDERING INFORMATION
Part Number
Package
....................IRF40N03..............................................TO-220
IRF40N03
N-CHANNEL Power MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
Characteristic
Symbol
OFF Characteristics
Drain-to-Source Breakdown Voltage
(VGS = 0 V, ID = 250 µA)
VDSS
Breakdown Voltage Temperature Coefficient
(Reference to 25к, ID = 1mA)
ӔVDSS/ǻTJ
Drain-to-Source Leakage Current
(VDS = 30 V, VGS = 0 V, TJ = 25к)
(VDS = 24 V, VGS = 0 V, TJ = 150к)
IDSS
Gate-to-Source Forward Leakage
(VGS = 20 V)
IGSS
Gate-to-Source Reverse Leakage
(VGS = -20 V)
IGSS
ON Characteristics
Gate Threshold Voltage
(VDS = VGS, ID = 250 µA)
Static Drain-to-Source On-Resistance
(VGS = 10 V, ID = 20A)
(Note 4)
VGS(th)
DataSheet4U.com RDS(on)
Forward Transconductance (VDS = 10 V, ID = 20A) (Note 4)
gFS
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Ciss
Coss
Crss
Total Gate Charge (VGS = 10 V)
Gate-to-Source Charge
(VDS = 24 V, ID = 20 A,
VGS = 5 V) (Note 5)
Qg
Qgs
Gate-to-Drain (“Miller”) Charge
Qgd
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDS = 15 V, ID = 20 A,
VGS = 10 V,
RG = 3.3ȍ) (Note 5)
td(on)
trise
td(off)
tfall
Source-Drain Diode Characteristics
Continuous Source Current
(Body Diode)
Integral pn-diode in MOSFET
IS
Pulse Source Current (Body Diode)
ISM
Diode Forward On-Voltage
(IS = 40 A, VGS = 0 V)
VSD
Reverse Recovery Time
Reverse Recovery Charge
(IF = 40A, VGS = 0 V,
di/dt = 100A/µs)
trr
Qrr
Note 1: TJ = +25к to 150к
Note 2: Repetitive rating; pulse width limited by maximum junction
temperature.
Note 3: ISD = 12.0A, di/dt ”100A/µs, VDD ” BVDSS, TJ = +150к
Note 4: Pulse width ” 250µs; duty cycle ” 2%
Note 5: Essentially independent of operating temerpature.
DataSheewt4Uw.cwom.magic-matsu.com
cIRF40N03
Min Typ Max
Units
30 ...V
0.037
V/к
µA
1
25
100 nA
-100
nA
1.0 2.0
14
26
................800
380
...............133
17
3
..................10
7.2
60
22.5
10
........................
55
110
3.0 V
mȍ DataShee
17
S
.
...
...
...
pF
pF
pF
nC
nC
nC
.. ns
ns
................n..s
ns
40 A
170 A
1.3 V
ns
nC
Page 2
DataSheet4 U .com

1 Page





IRF40N03 pdf, ピン配列
www.DataSheet4U.com
IRF40N03
POWER MOSFET
6
et4U.com
10
VDS =10V
8 ID=40A
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, T otal G ate C harge (nC )
F igure 9. G ate C harge
V DD
RL
V IN
D VOUT
VG S
RGEN G
S
300
200
100
R DS(ON) Limit
10
1ms
10ms
100ms
1s
DC
V GS =10V
1 S ingle P ulse
Tc=25 C
0.5
0.1 1
10 30 60
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULS E WIDTH
F igure 11. S witching T es t C ircuitDataSheet4U.comF igure 12. S witching Waveforms
2
1
D =0 . 5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
10-5
S INGLE PULS E
10-4
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
P DM
t1
t2
1. R įJA (t)=r (t) * R įJA
2. R įJA=S ee Datas heet
3. T J M-T A = P DM* R įJ A (t)
4. Duty C ycle, D=t1/t2
1
10
F igure 13. Normalized T hermal T rans ient Impedance C urve
DataShee
DataSheewt4wU.wco.mmagic-matsu.com
DataSheet4 U .com
Page 4


3Pages





ページ 合計 : 4 ページ
 
PDF
ダウンロード
[ IRF40N03 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF40N03

N-CHANNEL Power MOSFET

ETC
ETC


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap