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20N06のメーカーはETCです、この部品の機能は「NTD20N06」です。 |
部品番号 | 20N06 |
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部品説明 | NTD20N06 | ||
メーカ | ETC | ||
ロゴ | |||
このページの下部にプレビューと20N06ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
NTD20N06
Power MOSFET
20 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
• Lower RDS(on)
• Lower VDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Lower and Tighter VSD
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
60
60
"20
"30
20
10
60
60
0.40
1.88
1.36
−55 to
175
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
L = 1.0 mH, IL(pk) = 18.4 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
170 mJ
°C/W
2.5
80
110
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 6
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
37.5 mW
ID MAX
20 A
N−Channel
D
G
S
4
12
3
MARKING
DIAGRAMS
4
Drain
DPAK
CASE 369C
STYLE 2
1
Gate
2
Drain
3
Source
4
1
2
3
DPAK−3
CASE 369D
STYLE 2
4
Drain
12 3
Gate Drain Source
20N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTD20N06/D
1 Page www.DataSheet4U.com
NTD20N06
40
VGS = 10 V
9V
32
8V
24
16
8
7V
6.5 V
6V
5.5 V
5V
4.5 V
0
01 234
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
5
40
VDS ≥ 10 V
32
24
16
8 TJ = 25°C
TJ = 100°C
0
2.6 3.4 4.2
TJ = −55°C
5 5.8
6.6 7.4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.065
VGS = 10 V
0.055
0.045
TJ = 100°C
0.065
0.055
VGS = 15 V
0.045
TJ = 100°C
0.035
0.025
0.015
0
TJ = 25°C
TJ = −55°C
8 16 24 32
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.035
TJ = 25°C
0.025
TJ = −55°C
0.015
40 0
8 16 24 32 40
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
ID = 10 A
1.8 VGS = 10 V
1.6
10000
VGS = 0 V
1000
TJ = 150°C
1.4 TJ = 125°C
100
1.2
TJ = 100°C
1 10
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
3Pages www.DataSheet4U.com
NTD20N06
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
100 ms
1 ms
10 ms
1
0.1
0.1
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
180
160 ID = 18.4 A
140
120
100
80
60
40
20
0
25 50
75 100 125 150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
P(pk)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1 READ TIME AT t1
t2 TJ(pk) − TC = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
0.001 0.01 0.1 1 10
t, TIME (s)
Figure 13. Thermal Response
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
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ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ 20N06 データシート.PDF ] |
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