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6986SのメーカーはFairchild Semiconductorです、この部品の機能は「FDS6986S」です。 |
部品番号 | 6986S |
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部品説明 | FDS6986S | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと6986Sダウンロード(pdfファイル)リンクがあります。 Total 9 pages
September 2002
FDS6986S
Dual Notebook Power Supply N-Channel PowerTrench SyncFET™
General Description
The FDS6986S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6986S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
• Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
7.9A, 30V
RDS(on) = 20 mΩ @ VGS = 10V
RDS(on) = 28 mΩ @ VGS = 4.5V
• Q1: Optimized for low switching losses
Low gate charge (6.5 nC typical)
6.5A, 30V
RDS(on) = 29 mΩ @ VGS = 10V
RDS(on) = 38 mΩ @ VGS = 4.5V
D
D
D
D
SO-8
Pin 1 SO-8
G
SS
S
http://www.DataSheet4U.net/
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6986S
FDS6986S
13”
2002 Fairchild Semiconductor Corporation
Q2
5
6
7 Q1
8
4
3
2
1
Q2 Q1
30 30
±20 ±16
7.9 6.5
30 20
2
1.6
1
0.9
-55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
FDS6986S Rev C1(W)
datasheet pdf - http://www.DataSheet4U.net/
1 Page Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
tRR
Reverse Recovery Time
IF = 10 A,
QRR Reverse Recovery Charge diF/dt = 300 A/µs
(Note 3)
Q2
VSD Drain-Source Diode Forward VGS = 0 V, IS = 3.5 A
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
(Note 2)
Q2
Q1
3.0
1.3
17
12.5
0.5 0.7
0.74 1.2
A
ns
nC
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
http://www.DataSheet4U.net/
FDS6986S Rev C1 (W)
datasheet pdf - http://www.DataSheet4U.net/
3Pages Typical Characteristics Q1
20
VGS = 10V
6.0V
15
4.5V
3.5V
10
3.0V
5
2.5V
0
0 0.5 1 1.5 2 2.5 3
VDS, DRAIN-SOURCE VOLTAGE (V)
2.25
2
1.75
VGS = 3.0V
1.5 3.5V
1.25
4.5V
6.0V
1 10V
0.75
0
5 10 15
ID, DRAIN CURRENT (A)
20
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 6.5A
1.6 VGS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. On-Resistance Variation with
Temperature.
20
VDS = 5V
16
12
TA = -55oC
25oC
125oC
8
4
0
1.5
2 2.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 15. Transfer Characteristics.
0.075
0.065
ID = 3.3 A
0.055
0.045
TA = 125oC
0.035
http://www.DataSheet4U.net/
0.025
TA = 25oC
0.015
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6986S Rev C1 (W)
datasheet pdf - http://www.DataSheet4U.net/
6 Page | |||
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部品番号 | 部品説明 | メーカ |
6986S | FDS6986S | Fairchild Semiconductor |