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E3055T PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 E3055T
部品説明 MJE3055T
メーカ ETC
ロゴ ETC ロゴ 



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E3055T Datasheet, E3055T PDF,ピン配置, 機能
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MJE3055T/MJE2955T
GENERAL DESCRIPTION
Complementary, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
SILICON EPITAXIAL
PLANAR TRANSISTOR
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
ICM
Ptot
VCEsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
TO-220
Tmb 25
IC = 4.0A; IB = 0.4A
IF = 4.0A
CONDITIONS
VBE = 0V
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB=70V
VEB=5V
IC=1mA
IC = 4.0A; IB = 0.4A
IC = 4.0A; VCE = 4V
IC = 0.5A; VCE = 10V
VCB = 10V
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
MIN MAX UNIT
- 70 V
- 60 V
- 10 A
-A
- 75 W
- 1.2 V
1.5 2.0
V
-s
MIN MAX UNIT
- 70 V
- 60 V
5v
- 10 A
- 6A
- 75 W
-55 150
- 150
MIN MAX UNIT
- 1.0 mA
- 2.5 mA
60 v
- 1.2 V
20 100
5 - MHz
350 pF
us
us
us

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