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PDF IS64WV3216BLL Data sheet ( Hoja de datos )
| Número de pieza | IS64WV3216BLL | |
| Descripción | (IS61WV3216BLL / IS64WV3216BLL) 32K x 16 HIGH-SPEED CMOS STATIC RAM | |
| Fabricantes | ISSI | |
| Logotipo |  |
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IS64WV3216BLL
IS61WV3216BLL
32K x 16 HIGH-SPEED CMOS STATIC RAM
ISSI®
NOVEMBER 2005
FEATURES
DESCRIPTION
• High-speed access time:
12 ns: 3.3V + 10%
15 ns: 2.5V-3.6V
• CMOS low power operation:
50 mW (typical) operating
25 µW (typical) standby
The ISSI IS61/64WV3216BLL is a high-speed, 524,288-bit
static RAM organized as 32,768 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with inno-
vative circuit design techniques, yields access times as
fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low
power consumption.
• TTL compatible interface levels
• Fully static operation: no clock or refresh
required
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
• Three state outputs
• Data control for upper and lower bytes
• Automotive Temperature Available
• Lead-free available
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
DataShee
The IS61/64WV3216BLL is packaged in the JEDEC stan-
DataSheet4U.dcaormd 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
DataSheet4Upu.bclisohmed information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
09/26/05
DataSheet4 U .com
1
1 page  
www.DataSheet4U.com
IS64WV3216BLL
IS61WV3216BLL
ISSI ®
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Test Conditions
ICC VDD Dynamic Operating VDD = Max.,
Supply Current
IOUT = 0 mA, f = fMAX
ICC1 Operating Supply
Current
VDD = Max.,
Iout = 0mA, f = 0
ISB2 CMOS Standby
VDD = Max.,
Current (CMOS Inputs) CE ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Options
COM.
IND.
AUTO
typ.(2)
COM.
IND.
AUTO
COM.
IND.
AUTO
typ.(2)
-12 ns
Min. Max.
— 35
— 45
— 60
— 20
—5
—5
—5
— 20
— 50
— 75
—6
-15 ns
Min. Max.
— 30
— 40
— 50
— 20
—5
—5
—5
— 20
— 50
— 75
—6
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=2.5V, TA=25oC. Not 100% tested.
Unit
mA
mA
uA
et4U.com CAPACITANCE(1)
Symbol
CIN
COUT
Parameter
Input Capacitance
Input/Output Capacitance
DataSheet4U.com
Conditions
VIN = 0V
VOUT = 0V
Max.
6
8
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
DataShee
DataSheet4U.com
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
09/26/05
DataSheet4 U .com
5
5 Page 
www.DataSheet4U.com
IS64WV3216BLL
IS61WV3216BLL
ISSI ®
WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle)
t WC
ADDRESS
VALID ADDRESS
OE
t HA
CE LOW
WE
UB, LB
t SA
DOUT
DATA UNDEFINED
t AW
t PWE1
t PBW
t HZWE
HIGH-Z
t LZWE
et4U.com
DIN
t SD t HD
DATAIN VALID
DataSheet4U.com
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
ADDRESS
OE LOW
t WC
VALID ADDRESS
t HA
CE LOW
WE
UB, LB
t SA
DOUT
DATA UNDEFINED
DIN
t AW
t PWE2
t PBW
t HZWE
HIGH-Z
t LZWE
t SD t HD
DATAIN VALID
DataSheet4U.com
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
09/26/05
DataSheet4 U .com
UB_CEWR2.eps
UB_CEWR3.eps
DataShee
11
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IS64WV3216BLL.PDF ] | |
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