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IS61WV102416BLL PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IS61WV102416BLL
部品説明 (IS6xWV102416xLL) 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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IS61WV102416BLL Datasheet, IS61WV102416BLL PDF,ピン配置, 機能
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IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
ISSI®
1M x 16 HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
APRIL 2006
FEATURES
DESCRIPTION
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
noise immunity
• Easy memory expansion with CE and OE op-
The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL
are high-speed, 16M-bit static RAMs organized as 1024K
words by 16 bits. It is fabricated using ISSI's high-perform-
ance CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-perfor-
mance and low power consumption devices.
tions
CE power-down
• Fully static operation: no clock or refresh
required
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
• TTL compatible inputs and outputs
• Single power supply
VDD 1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for VDD 1.65V to 2.2V
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
VDD 2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for VDD 2.4V to 3.6V
The device is packaged in the JEDEC standard 48-piDn ataShee
speed = 8ns for VDD 3.3V + 5%
TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
DataSheet4U.com
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1024K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
DataSheet4Uob.tcaoinmthe latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
02/13/06
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IS61WV102416BLL

(IS6xWV102416xLL) 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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