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IRG4PH30K の電気的特性と機能

IRG4PH30KのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4PH30K
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4PH30K Datasheet, IRG4PH30K PDF,ピン配置, 機能
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PD -91580A
INSULATED GATE BIPOLAR TRANSISTOR
Features
High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
IRG4PH30K
Short Circuit Rated
UltraFast IGBT
C
VCES = 1200V
G
E
n-channel
VCE(on) typ. = 3.10V
@VGE = 15V, IC = 10A
Benefits
As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBT's offer highest power
density motor controls possible
This part replaces the IRGPH30K and IRGDPaHta3S0Mheet4U.com
devices
Absolute Maximum Ratings
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
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Max.
1200
20
10
40
40
10
±20
121
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Typ.
–––
0.24
–––
6 (0.21)
Max.
1.2
–––
40
–––
Units
V
A
µs
V
mJ
W
°C
Units
°C/W
g (oz)
1
2/7/2000
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IRG4PH30K pdf, ピン配列
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IRG4PH30K
30
25
20
S q uare wave:
15 60 % of ra ted
vo l t a g e
10
5 Id e a l d io de s
0
0.1
For both:
D u ty c yc le : 50%
TJ = 1 2 5°C
Tsink = 90°C
Gate drive as specified
Po wer D issipat io n = 2440W
Triangular wave:
C lamp voltage:
80% of rated
1 10
f, Frequency (kHz)
A
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
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100 100
10
TJ = 150 °C
TJ = 25 °C
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
TJ = 150 °C
TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
6 8 10 12 14
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
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IRG4PH30K 電子部品, 半導体
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IRG4PH30K
10.0 RG = O23hm
T J = 150° C
VCC = 960V
8.0 VGE = 15V
100 VGE = 20V
T J = 125 oC
6.0
10
4.0
2.0
0.0
0
5 10 15
I C , Collector Current (A)
SAFE OPERATING AREA
1
20 1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
10000
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
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Fig. 12 - Turn-Off SOA
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6
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共有リンク

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