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D1695 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 D1695
部品説明 2SD1695
メーカ NEC
ロゴ NEC ロゴ 

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D1695 Datasheet, D1695 PDF,ピン配置, 機能
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DATA SHEET
SILICON POWER TRANSISTOR
2SD1695
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD1695 is a Darlington connection transistor and
incorporates a dumper diode between the collector and emitter and
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a constant voltage diode and protection elements between the
collector and base. This transistor is ideal for drives in solenoid and
actuators.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• On-chip protection elements enable time and cost reduction.
C to E: Dumper diode
C to B: Constant diode
• Low collector saturation voltage
QUALITY GRADES
• Standard
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Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Collector (fin)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT (Ta = 25°C)
Total power dissipation
PT (Tc = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50%
Ratings
31 ±4
31 ±4
8.0
±2.0
±3.0
0.2
1.3
10
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16138EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
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