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IRF1104SPBF の電気的特性と機能

IRF1104SPBFのメーカーはInternational Rectifierです、この部品の機能は「(IRF1104S/LPBF) HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF1104SPBF
部品説明 (IRF1104S/LPBF) HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF1104SPBF Datasheet, IRF1104SPBF PDF,ピン配置, 機能
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PD - 95526
IRF1104S/LPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Surface Mount (IRF1104S)
l Low-profile through-hole (IRF1104L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The DD2aPtaakShiseet4U.com
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRF1104L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
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HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 0.009
ID = 100A…
S
D 2 Pak
TO-262
Max.
100†
71†
400
2.4
170
1.1
±20
350
60
17
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.9
62
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
7/20/04
DataShee
DataSheet4 U .com
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1 Page





IRF1104SPBF pdf, ピン配列
www.DataSheet4U.com
IRF1104S/LPbF
et4U.com
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
4.5V
10
20µs PULSE WIDTH
1 TJ= 25 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
20µs PULSE WIDTH
1 TJ= 175 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
DataSheet4U.com
1000
100 TJ = 175° C
10
TJ = 25° C
1
0.1
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
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DataSheet4 U .com
2.5 ID = 100A
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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DataShee


3Pages


IRF1104SPBF 電子部品, 半導体
www.DataSheet4U.com
et4U.com
IRF1104S/LPbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
800
600
400
200
TOP
BOTTOM
ID
24A
42A
60A
V(BR)DSS
tp
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
DataSheet4U.comFig 12c.
Maximum Avalanche Energy
Vs. Drain Current
DataShee
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
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DataSheet4 U .com
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF1104SPBF

(IRF1104S/LPBF) HEXFET Power MOSFET

International Rectifier
International Rectifier


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