|
|
PDF IRF1104S Data sheet ( Hoja de datos )
| Número de pieza | IRF1104S | |
| Descripción | (IRF1104L/S) HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF1104S (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
l Advanced Process Technology
l Ultra Low On-Resistance
l Surface Mount (IRF1104S)
l Low-profile through-hole (IRF1104L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because DofaittsaSlohweet4U.com
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRF1104L) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
DataSheet4U.com
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
DataSheet4 U .com
PD -91845
IRF1104S/L
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 0.009Ω
ID = 100A
S
DataShee
D 2 Pak
T O -26 2
Max.
100
71
400
2.4
170
1.1
±20
350
60
17
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.9
62
DataSheet4U.com
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
11/20/98
1 page  
www.DataSheet4U.com
IRF1104S/L
100
80
60
40
et4U.com 20
LIMITED BY PACKAGE
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
DataShee
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
DataSheet4U.com
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
DataSheet4U.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
DataSheet4 U .com
DataSheet4U.com
1
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF1104S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF1104 | Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) | International Rectifier |
| IRF1104L | (IRF1104L/S) HEXFET Power MOSFET | International Rectifier |
| IRF1104LPBF | (IRF1104S/LPBF) HEXFET Power MOSFET | International Rectifier |
| IRF1104S | (IRF1104L/S) HEXFET Power MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |