PDF FP1189 Data sheet ( Hoja de datos )

Número de pieza	FP1189
Descripción	HFET
Fabricantes	WJ Communications
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No Preview Available ! www.DataSheet4U.com FP1189 ½-Watt HFET The Communications Edge TM Product Information Product Features • 50 – 4000 MHz • +27 dBm P1dB • +40 dBm Output IP3 • High Drain Efficiency • 20.5 dB Gain @ 900 MHz • MTTF >100 Years • SOT-89 SMT Package Applications • Mobile Infrastructure • CATV / DBS • W-LAN / ISM • RFID • Defense / Homeland Security • Fixed Wireless Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface- mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz. The device conforms to WJ Communications’ long history of producing high reliability and quality components. The FP1189 has an associated MTTF of greater than 100 years at a mounting temperature of 85°C. All devices are 100% RF & DC tested. GND 4 1 RF IN 2 GND 3 RF OUT Function Input / Gate Output / Drain Ground Pin No. 1 3 2, 4 The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required. Specifications Typical Performance DC Parameter Saturated Drain Current, Idss (1) Transconductance, Gm Pinch Off Voltage, Vp (2) Thermal Resistance Junction Temperature (3) RF Parameter (4) Frequency Range Small Signal Gain SS Gain (50 Ω, unmatched) Maximum Stable Gain Output P1dB Output IP3 (5) Noise Figure Units mA mS V °C / W °C Min 220 Units MHz dB dB dB dBm dBm dB Min 50 17 Typ Max Parameter (6) Units Typical 290 360 Frequency MHz 915 1960 2140 155DataSheet4U.cSo21m dB 20.6 15.7 14.7 -2.1 S11 dB -13 -26 -24 68 S22 160 Output P1dB dB -6.0 -9.6 -9.0 dBm +27.4 +27.2 +27.2 Output IP3 dBm +39.9 +40.4 +39.7 Typ Max Noise Figure dB 2.7 3.7 4.3 900 4000 20.5 21 24 Channel Power (7) @ -45 dBc ACPR Drain Voltage Drain Current dBm V mA +21 +20.8 +18.4 +8 125 +27.4 +40 6. Typical parameters represent performance in an application circuit. 7. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz. 2.7 DataShee 1. Idss is measured with Vgs = 0 V, Vds = 3 V. 2. Pinch-off voltage is measured when Ids = 1.2 mA. 3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage. 4. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 125 mA, frequency = 900 MHz in a tuned application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power). 5. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Ordering Information Parameter Operating Case Temperature Storage Temperature DC Power RF Input Power (continuous) Drain to Gate Voltage, Vdg DataSheet4UJu.cncotmion Temperature Rating -40 to +85 °C -55 to +125 °C 2.0 W 6 dB above Input P1dB +14 V +220° C Operation of this device above any of these parameters may cause permanent damage. Part No. FP1189 FP1189-PCB900S FP1189-PCB1900S FP1189-PCB2140S Description ½ -Watt HFET 870 – 960 MHz Application Circuit 1930 – 1990 MHz Application Circuit 2110 – 2170 MHz Application Circuit Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com DataSheet4U.com DataSheet4 U .com June 2003 1 page www.DataSheet4U.com et4U.com FP1189 ½-Watt HFET The Communications Edge TM Product Information Application Circuit: 1930 – 1990 MHz (FP1189-PCB1900S) The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 125 mA, 25°C Frequency MHz 1930 1960 S21 – Gain dB 15.8 15.7 S11 – Input Return Loss dB -26 -26 S22 – Output Return Loss dB -9.2 -9.6 Output P1dB dBm +27.4 +27.2 Output IP3 (+12 dBm / tone, 1 MHz spacing) dBm +40.4 Noise Figure dB 3.7 IS-95 Channel Power @ -45 dBc ACPR dBm +20.8 1990 15.5 -24 -9.0 +27.4 -Vgg CAP ID=C4 CAP ID=C10 CAP ID=C3 C=33 pF C=DNP pF C=DNP pF Vds = 8 V @ 125 mA CAP ID=C11 C=1e5 pF RES ID=R1 R=100 Ohm CAP ID=C13 C=DNP pF CAP ID=C2 C=DNP pF PORT P=1 Z=50 Ohm CAP ID=C1 C=33 pF I ND ID=L1 L=22 nH CAP ID=C12 C=DNP pF CAP ID=C8 C=DNP pF DataSheet4U.com SUBCKT ID=Q1 NET="FP1189" CAP ID=C7 C=DNP pF CAP ID=C6 C=33 pF 2 1 I ND ID=L2 L=2.7 nH I ND ID=L3 L=22 nH CAP ID=C9 C=33 pF PORT P=2 Z=50 Ohm CAP ID=C15 C=1.8 pF RES ID=R2 CAP R=10 Ohm ID=C13 C=DNP pF CAP ID=C5 C=0.5 pF DataShee Ref. Desig. C1, C4, C6, C9 C5 C11 C15 L1, L3 L2 R1 R2 Q1 C2, C3, C7, C8, C10, C12, C13, C14 Bill of Materials Value 33 pF Part style Chip capacitor 0.5 pF Chip capacitor 0.1 µF 1.8 pF Chip capacitor Chip capacitor 22 nH Multilayer chip inductor 2.7 nH Multilayer chip inductor 100 Ω Chip resistor 10 Ω Chip resistor FP1189 WJ 0.5W HFET Do Not Place Size 0603 0603 1206 0603 0603 0603 0603 0603 SOT-89 DataSheet4U.co14mmil GETEKTM ML200DSS (εr = 4.2) The main microstrip line has a line impedance of 50 Ω. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com DataSheet4U.com DataSheet4 U .com June 2003 5 Page

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