|
|
IRFU420BのメーカーはFairchild Semiconductorです、この部品の機能は「500V N-Channel MOSFET」です。 |
部品番号 | IRFU420B |
| |
部品説明 | 500V N-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとIRFU420Bダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
November 2001
IRFR420B / IRFU420B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
• 2.3A, 500V, RDS(on) = 2.6Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D!
GS
D-PAK
IRFR Series
I-PAK
GDS
IRFU Series
DataSheet4U.com
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G!
●
◀▲
●
●
!
S
IRFR420B / IRFU420B
500
2.3
1.5
8.0
± 30
200
2.3
4.1
5.5
2.5
41
0.33
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
DataSheet4U.com©2001 Fairchild Semiconductor Corporation
Typ Max Units
-- 3.05 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. B, November 2001
DataSheet4 U .com
DataSheet4U.com
DataShee
1 Page www.DataSheet4U.com
Typical Characteristics
et4U.com
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100 Bottom: 5.0 V
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1.
2.
V25DS0μ=
40V
s Pulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
10
8
VGS = 10V
6
V = 20V
GS
100
4 DataSheet4U.com
150℃
25℃
2
※ Note : TJ = 25℃
0
0 2 4 6 8 10
ID, Drain Current [A]
10-1
0.2
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0
VSD, Source-Drain voltage [V]
1.2
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1000
800
600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
400
C
oss
※ Notes :
200
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
12
V = 100V
DS
10
VDS = 250V
8 VDS = 400V
6
4
2
※ Note : ID = 2.5 A
0
0 3 6 9 12 15
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
DataShee
DataSheet4U.com©2001 Fairchild Semiconductor Corporation
DataSheet4 U .com
Rev. B, November 2001
DataSheet4U.com
3Pages www.DataSheet4U.com
et4U.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
DataSheet4U.com
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
DataShee
DataSheet4U.com©2001 Fairchild Semiconductor Corporation
DataSheet4 U .com
Rev. B, November 2001
DataSheet4U.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ IRFU420B データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFU420 | Power MOSFET ( Transistor ) | Fairchild Semiconductor |
IRFU420 | N-Channel Power MOSFETs | Intersil |
IRFU420 | Power MOSFET ( Transistor ) | IRF |
IRFU420 | N-Channel Power MOSFETs | Intersil Corporation |