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IRFU420A の電気的特性と機能

IRFU420AのメーカーはInternational Rectifierです、この部品の機能は「SMPS MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU420A
部品説明 SMPS MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFU420A Datasheet, IRFU420A PDF,ピン配置, 機能
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PD - 94355
SMPS MOSFET
IRFR420A
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High speed power switching
IRFU420A
HEXFET® Power MOSFET
VDSS
500V
RDS(on) max ID
3.0
3.3A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective COSS specified (See AN 1001)
D-Pak
IRFR420A
I-Pak
IRFU420A
Absolute Maximum Ratings
Parameter DataSheet4U.com
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
3.3
2.1
10
83
0.67
± 30
3.4
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
140
2.5
5.0
Typ.
–––
0.50
–––
Max.
1.5
–––
62
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Units
A
W
W/°C
V
V/ns
Units
mJ
A
mJ
Units
°C/W
1
12/10/01
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IRFU420A pdf, ピン配列
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et4U.com
IRFR420A/IRFU420A
10
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
4.5V
10
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.01
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
0.1
1
20µs PULSE WIDTH
TJ = 150 °C
10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
DataSheet4U.com
10
TJ = 150°C
1
TJ = 25°C
0.1
0.01
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0
VGS , Gate-to-Source Voltage (V)
9.0
Fig 3. Typical Transfer Characteristics
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3.0 ID = 2.5A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRFU420A 電子部品, 半導体
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IRFR420A/IRFU420A
et4U.com
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R)DSS
tp
300
250
200
150
100
50
TOP
ID
1.1A
1.6A
BOTTOM 2.5A
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
IAS
Fig 12b.
Unclamped Inductive WavefoDramtasSheet4U.comFig 12c.
Maximum Avalanche Energy
Vs. Drain Current
QG
10 V
QGS
QGD
700
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
650
600
550
0.0
0.5 1.0 1.5 2.0
IAV , Avalanche Current ( A)
2.5
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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