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Número de pieza | IXGK60N60B2D1 | |
Descripción | (IXGX60N60B2D1 / IXGK60N60B2D1) HiPerFAST IGBT with Diode | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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Advance Technical Data
HiPerFASTTM
IGBT with Diode
Optimized for 10-25 kHz
hard switching and up to
100 kHz resonant switching
IXGK 60N60B2D1
IXGX 60N60B2D1
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 75 A
< 1.8 V
= 100 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
600 V
600 V
±20 V
±30 V
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
ICM TC = 25°C, 1 ms
75 A
60 A
300 A
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
Weight
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
ICM = 150
Clamped inductive load @ VCE ≤ 60D0 aVtaSheet4U.com
TC = 25°C
500
-55 ... +150
150
-55 ... +150
A
W
°C
°C
°C
Mounting torque, TO-264
1.13/10 Nm/lb.in.
TO-264
PLUS247
10 g
6g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 50 A, VGE = 15 V
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
TJ = 125°C
300 µA
5 mA
±100 nA
1.8 V
TO-264 AA
(IXGK)
G
CE
PLUS247
(IXGX)
(TAB)
G = Gate
C = Collector
E = Emitter Tab = Collector
(TAB)
DataShee
Features
• Square RBSOA
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
DataSheet4U.com
© 2003 IXYS All rights reserved
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DS99114(11/03)
1 page www.DataSheet4U.com
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
350
300
250
td(off)
tfi - - - - - -
RG = 3.3Ω
VGE = 15V
VCE = 400V
IC = 25A
50A
100A
200
150
IC = 100A
50A
100 25A
50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
IXGK 60N60B2D1
IXGX 60N60B2D1
Fig. 14. Gate Charge
15
VCE = 300V
IC = 50A
12 IG = 10mA
9
6
3
0
0 20 40 60 80 100 120 140 160 180
Q G - nanoCoulombs
10000
et4U.com
1000
Fig. 15. Capacitance
f = 1 MHz
Cies
CoesDataSheet4U.com
DataShee
100
Cres
10
0
5 10 15 20 25 30 35 40
VC E - Volts
0.275
0.25
0.225
0.2
0.175
0.15
0.125
0.1
0.075
0.05
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1
© 2003 IXYS All rights reserved
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Fig. 16. Maxim um Transient Therm al Resistance
10
Pulse Width - milliseconds
100
DataSheet4U.com
1000
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet IXGK60N60B2D1.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXGK60N60B2D1 | (IXGX60N60B2D1 / IXGK60N60B2D1) HiPerFAST IGBT with Diode | IXYS Corporation |
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