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IXGX60N60B2D1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXGX60N60B2D1
部品説明 (IXGX60N60B2D1 / IXGK60N60B2D1) HiPerFAST IGBT with Diode
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXGX60N60B2D1 Datasheet, IXGX60N60B2D1 PDF,ピン配置, 機能
www.DataSheet4U.com
Advance Technical Data
HiPerFASTTM
IGBT with Diode
Optimized for 10-25 kHz
hard switching and up to
100 kHz resonant switching
IXGK 60N60B2D1
IXGX 60N60B2D1
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 75 A
< 1.8 V
= 100 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
600 V
600 V
±20 V
±30 V
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
ICM TC = 25°C, 1 ms
75 A
60 A
300 A
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
Weight
VGE = 15 V, TVJ = 125°C, RG = 10
ICM = 150
Clamped inductive load @ VCE 60D0 aVtaSheet4U.com
TC = 25°C
500
-55 ... +150
150
-55 ... +150
A
W
°C
°C
°C
Mounting torque, TO-264
1.13/10 Nm/lb.in.
TO-264
PLUS247
10 g
6g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 50 A, VGE = 15 V
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
TJ = 125°C
300 µA
5 mA
±100 nA
1.8 V
TO-264 AA
(IXGK)
G
CE
PLUS247
(IXGX)
(TAB)
G = Gate
C = Collector
E = Emitter Tab = Collector
(TAB)
DataShee
Features
Square RBSOA
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
DataSheet4U.com
© 2003 IXYS All rights reserved
DataSheet4 U .com
DataSheet4U.com
DS99114(11/03)

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部品番号部品説明メーカ
IXGX60N60B2D1

(IXGX60N60B2D1 / IXGK60N60B2D1) HiPerFAST IGBT with Diode

IXYS Corporation
IXYS Corporation

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