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PDF IXGX50N60C2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGX50N60C2D1 | |
| Descripción | (IXGX50N60C2D1 / IXGK50N60C2D1) HiPerFAST IGBT with Diode | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFASTTM
IGBT with Diode
IXGK 50N60C2D1
IXGX 50N60C2D1
C2-Class High Speed IGBTs
Preliminary Data Sheet
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 75 A
= 2.5 V
= 48 ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
Maximum Ratings
600 V
600 V
±20 V
±30 V
TC = 25°C (limited by leads)
TC = 110°C
TC = 110°C
TC = 25°C, 1 ms
75 A
50 A
48 A
300 A
VGE = 15 V, TVJ = 125°C, RG = 10 Ω DataSheet4UI.CcMo=m100
Clamped inductive load @ VCE ≤ 600 V
TC = 25°C
480
-55 ... +150
150
-55 ... +150
A
W
°C
°C
°C
Mounting torque, TO-264
1.13/10 Nm/lb.in.
TO-264
PLUS247
10 g
6g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 40 A, VGE = 15 V
Note 1
DataSheet4U.com
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
TJ = 25°C
TJ = 125°C
650 µA
5 mA
±100 nA
TJ = 25°C
TJ = 125°C
2.1 2.5
1.8
V
V
TO-264 AA
(IXGK)
GC
E
(TAB)
PLUS247
(IXGX)
G = Gate
E = Emitter
G
CE
C = Collector
Tab = Collector
(TAB)
DataShee
Features
• Very high frequency IGBT and
anti-parallel FRED in one package
• Square RBSOA
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
© 2004 IXYS All rights reserved
DataSheet4 U .com
DataSheet4U.com
DS99148A(05/04)
1 page  
www.DataSheet4U.com
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
200
180
160
140
td(off)
tfi - - - - - -
RG = 2Ω
VGE = 15V
VCE = 480V
IC = 20A
120
IC = 80A
100
80 IC = 40A
60
40 IC = 20A
20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
110
100
90
80
70
60
50
40
30
20
10
0
100
IXGK 50N60C2D1
IXGX 50N60C2D1
Fig. 14. Reverse-Bias
Safe Operating Area
TJ = 125º C
RG = 10Ω
dV/dT < 10V/ns
200 300 400 500 600
V C E - Volts
et4U.com
16
14
12
10
8
6
4
2
0
0
0.35
Fig. 15. Gate Charge
VCE = 300V
IC = 40A
IG = 10mA
10000
1000
DataSheet4U.com
Fig. 16. Capacitance
f = 1 MHz
Cies
100 Coes
30 60 90 120
Q G - nanoCoulombs
150
10
0
Cres
5 10 15 20 25 30 35
VC E - Volts
Fig. 16. Maxim um Transient The rm al Resistance
DataShee
40
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1
DataSheet4U.com
10
Pulse Width - milliseconds
100
1000
© 2004 IXYS All rights reserved
DataSheet4 U .com
DataSheet4U.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGX50N60C2D1.PDF ] | |
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