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IXGX50N60AU1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXGX50N60AU1
部品説明 HiPerFAST IGBT with Diode
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXGX50N60AU1 Datasheet, IXGX50N60AU1 PDF,ピン配置, 機能
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Preliminary data
HiPerFASTTM
IGBT with Diode
Combi Pack
IXGX50N60AU1
IXGX50N60AU1S
VCES
I
C25
VCE(sat)
tfi
= 600 V
= 75 A
= 2.7 V
= 275 ns
TO-247 Hole-less SMD
(50N60AU1S)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
I
C25
IC90
ICM
SSOA
(RBSOA)
PC
T
J
TJM
Tstg
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
600
600
±20
±30
T
C
= 25°C, limited by leads
TC = 90°C
TC = 25°C, 1 ms
75
50
200
VGE= 15 V, TVJ = 125°C, RG = 10
Clamped inductive load, L = 30 µH
ICM = 100
@ 0.8 VCES
TC = 25°C
DataSheet4U.com300
-55 ... +150
150
-55 ... +150
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
6
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
g
°C
G
E
TO-247 Hole-less
(50N60AU1)
C (TAB)
G
C
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
DataShee
Features
l Hole-less TO-247 for clip mount
l High current capability
l High frequency IGBT and anti-
parallel FRED in one package
l Low V
CE(sat)
- for minimum on-state conduction
losses
l MOS Gate turn-on
- drive simplicity
l Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Symbol
BV
CES
VGE(th)
ICES
I
GES
VCE(sat)
DataSheet4U.com
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I
C
=
500
µA,
V
GE
=
0
V
IC = 500 µA, VCE = VGE
VCE = 0.8 • VCES
V =0V
GE
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC90, VGE = 15 V
TJ = 25°C
T
J
=
125°C
600
2.5
V
5.5 V
250 µA
15 mA
±100 nA
2.7 V
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Space savings (two devices in one
package)
l Reduces assembly time and cost
l High power density
© 1997 IXYS All rights reserved
DataSheet4 U .com
DataSheet4U.com
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