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H11A4 の電気的特性と機能

H11A4のメーカーはInfineon Technologies AGです、この部品の機能は「(H11Ax) Industry Standard Single Channel 6 Pin DIP Optocoupler」です。


製品の詳細 ( Datasheet PDF )

部品番号 H11A4
部品説明 (H11Ax) Industry Standard Single Channel 6 Pin DIP Optocoupler
メーカ Infineon Technologies AG
ロゴ Infineon Technologies AG ロゴ 




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H11A4 Datasheet, H11A4 PDF,ピン配置, 機能
www.DataSheet4U.com
PHOTOTRANSISTOR
Industry Standard
Single Channel
6 Pin DIP Optocoupler
DEVICE TYPES
Part No. CTR % Min. Part No.
CTR % Min.
Dimensions in Inches (mm)
4N25
4N26
4N27
4N28
4N35
4N36
4N37
4N38
H11A1
H11A2
H11A3
H11A4
H11A5
20
20
10
10
100
100
100
10
50
20
20
10
30
MCT2
MCT2E
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
20
20
50
4590
75150
125250
225400
7090
1560
100
FEATURES
• Interfaces with Common Logic Families
321
pin one ID
.248 (6.30)
.256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
Anode 1
Cathode 2
4 56
.335 (8.50)
.343 (8.70)
NC 3
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
6 Base
5 Collector
4 Emitter
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300.347
(7.628.81)
.114 (2.90)
.130 (3.0)
• Input-output Coupling Capacitance < 0.5 pF
• Industry Standard Dual-in-line 6-pin Package
• Field Effect Stable by TRIOS®
• 5300 VRMS Isolation Test Voltage
• Underwriters Laboratory File #E52744
DESCRIPTION
This data sheet presents five families of Infineon Industry Standard DataShee
Single Channel Phototransistor Couplers. These families include the
DataSh4eNe2t54/U26.c/2o7m/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
V
DE
VDE #0884 Approval Available with Option 1
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
APPLICATIONS
• AC Mains Detection
• Reed Relay Driving
• Switch Mode Power Supply Feedback
• Telephone Ring Detection
• Logic Ground Isolation
• Logic Coupling with High Frequency Noise
Rejection
Notes:
Designing with data sheet is covered in Application Note 45.
277 devices.Each optocoupler consists of Gallium Arsenide infra-
red LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 VRMS Isolation Test Voltage. This isolation performance
is accomplished through Infineon double molding isolation manu-
facturing process. Compliance to VDE 0884 partial discharge isola-
tion specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation volt-
ages, is insured by incorporating a TRansparent lOn Shield
(TRIOS)® on the phototransistor substrate. These isolation pro-
cesses and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
DataSheet4U.com
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–53
DataSheet4 U .com
DataSheet4U.com
March 27, 2000-00

1 Page





H11A4 pdf, ピン配列
www.DataSheet4U.com
4N35/36/37/38—Characteristics TA=25°C
Emitter
Symbol Min. Typ.
Forward Voltage*
VF 1.3
0.9
Reverse Current*
Capacitance
Detector
IR 0.1
CO 25
Breakdown Voltage, Collector-Emitter*
4N35/36/37
4N38
BVCEO
30
80
Breakdown Voltage, Emitter-Collector*
BVECO 7.0
Breakdown Voltage, Collector-Base*
4N35/36/37 BVCBO 70
4N38
80
Leakage Current, Collector-Emitter*
4N35/36/37
4N38
ICEO
5.0
——
Leakage Current, Collector-Emitter*
4N35/36/37
4N38
ICEO
——
6.0
Capacitance, Collector-Emitter
Package
CCE 6.0
DC Current Transfer Ratio*
4N35/36/37 CTR
100
4N38
20
DC Current Transfer Ratio*
4N35/36/37 CTR
40 50
et4U.com Resistance, Input to Output*
Coupling Capacitance
Switching Time*
* Indicates JEDEC registered value
4N38
— — 30
RIO 1011
CIO 0.5
DtaOtNa, StOhFeF et4U.com10
H11A1 through H11A5—Characteristics TA=25°C
Emitter
Symbol Min.
Forward Voltage
H11A1H11A4
H11A5
VF
Reverse Current
Capacitance
Detector
IR
C0
Breakdown Voltage, Collector-Emitter
Breakdown Voltage, Emitter-Collector
Breakdown Voltage, Collector-Base
Leakage Current, Collector-Emitter
Capacitance, Collector-Emitter
Package
BVCEO
BVECO
BVCBO
ICEO
CCE
30
7.0
70
DC Current Transfer Ratio
H11A1
CTR
50
H11A2/3
20
H11A4
10
H11A5
30
Saturation Voltage, Collector-Emitter
VCEsat
Capacitance, Input to Output
CIO
Switching Time
tON, tOFF
DataSheet4U.com
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
255
Typ.
1.1
1.1
50
5.0
6.0
0.5
3.0
DataSheet4 U .com
Max.
1.5
1.7
10
Unit
V
µA
pF
Condition
IF=10 mA
IF=10 mA, TA=55°C
VR=6.0 V
VR=0, f=1.0 MHz
V
V
V
——
50 nA
50
500 µA
pF
IC=1.0 mA
IE=100 µA
IC=100 µA, IB=1.0 µA
VCE=10 V, IF=0
VCE=60 V, IF=0
VCE=30 V, IF=0, TA=100°C
VCE=60 V, IF=0, TA=100°C
VCE=0
% VCE=10 V, IF=10 mA,
VCE=1.0 V, IF=20 mA
% VCE=10 V, IF=10 mA,
— — TA=55 to 100°C
VIO=500 V
pF f=1.0 MHz
DataShee
µs IC=2.0 mA, RL=100 Ω, VCC=10 V
Max.
1.5
1.7
10
Unit
V
µA
pF
Condition
IF=10 mA
VR=3.0 V
VR=0, f=1.0 MHz
V
IC=1.0 mA, IF=0 mA
V
IE=100 µA, IF=0 mA
V
IC=10 µA, IF=0 mA
50 nA VCE=10 V, IF=0 mA
pF VCE=0
%
0.4 V
pF
µs
VCE=10 V, IF=10 mA
ICE=0.5 mA, IF=10 mA
IC=2.0 mA, RL=100 Ω, VCE=10 V
Phototransistor, Industry Standard
March 27, 2000-00
DataSheet4U.com


3Pages


H11A4 電子部品, 半導体
www.DataSheet4U.com
Figure 7. Collector-emitter Leakage Current vs. Temp.
10 5
10 4
10 3
10 2
10 1 Vce = 10 V
Typical
10 0
10 1
10 2
20
0 20 40 60 80
TA - Ambient Temperature - °C
100
Figure 10. Normalized Non-saturated HFE vs. Base
Current and Temperature
1.2
70°C
50°C
1.0
25°C
20°C
0.8
Normalized to:
Ib=20 µA, Vce=10 V, TA=25°C
0.6
0.4
1
10 100
Ib - Base Current - µA
1000
Figure 8. Normalized CTRcb vs. LED Current and Temp.
1.5
Normalized to:
Vcb=9.3 V, IF=10 mA, TA=25°C
1.0
et4U.com
0.5
0.0
.1
25°C
50°C
70°C
1 10
IF - LED Current - mA
100
Figure 11. Normalized HFE vs. Base Current and Temp.
1.5
70°C 50°C
1.0
Normalized to:
Vce=10 V, Ib=20 µA
TA=25°C
25°C
20°C
0.5
Vce=0.4 V
0.0
1
10 100
Ib - Base Current - µA
1000
Figure 9. Normalized Photocurrent vs. IF and Temp. DataSheet4FUig.cuorem12. Propagation Delay vs. Collector Load Resistor
10
1000
2.5
Normalized to:
IF=10 mA, TA=25°C
IF=10 mA, TA=25°C
VCC=5.0 V, Vth=1.5 V
1
tPHL
100
2.0
0.1
0.01
.1
Nib, TA=20°C
Nib, TA=25°C
Nib, TA= 50°C
Nib, TA=70°C
1 10
IF - LED Current - mA
100
Figure 13. Switching Timing
IF
10
tPLH
1.5
1
.1 1 10
RL - Collector Load Resistor - k
Figure 14. Switching Schematic
1.0
100
VCC = 5.0 V
tD
VO tR
tPLH
VTH=1.5 V
tPHL
tS tF
DataSheet4U.com
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
258
DataSheet4 U .com
F=10 KHz,
DF= 50 %
IF=10 mA
RL
VO
Phototransistor, Industry Standard
March 27, 2000-00
DataSheet4U.com

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