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K1518のメーカーはHitachi Semiconductorです、この部品の機能は「MOSFET ( Transistor ) - 2SK1518」です。 |
部品番号 | K1518 |
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部品説明 | MOSFET ( Transistor ) - 2SK1518 | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとK1518ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
2SK1517, 2SK1518
Silicon N-Channel MOS FET
Application
High speed power switching
www.DataSheet4U.com
Features
• Low on-resistance
• High speed switching
• Low drive current
• Built-in fast recovery diode (trr = 120 ns)
• Suitable for motor control, switching regulator, DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
1 Page 2SK1517, 2SK1518
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
breakdown voltage
2SK1517 V(BR)DSS
2SK1518
450
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1517 IDSS
drain current
2SK1518
—
—
Gate to source cutoff voltage VGS(off)
Static Drain to source 2SK1517 RDS(on)
www.DataoSnhseteatt4eUr.ecosmistance 2SK1518
2.0
—
—
Forward transfer admittance |yfs|
10
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
—
—
—
—
—
Body to drain diode reverse
recovery time
t rr
—
Note: 1. Pulse test
Typ Max Unit
——V
——V
— ±10 µA
— 250 µA
—
0.20
0.22
16
3050
940
140
35
130
240
105
1.0
3.0
0.25
0.27
—
—
—
—
—
—
—
—
—
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
120 —
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V *1
ID = 10 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 10 A, VGS = 10 V,
RL = 3 Ω
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0,
diF/dt = 100 A/µs
3
3Pages 2SK1517, 2SK1518
5,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
2,000 VGS = 0
Pulse Test
1,000
500
200
100
50
www.DataSheet4U.co0m.5
12
5 10 20
Reverse Drain Current IDR (A)
50
Dynamic Input Characteristics
500
VDD = 100 V
250 V
20
400 400 V
VGS
VDS
16
300 12
200 8
100
VDD = 400 V
250V
ID = 20 A
4
100 V
0
0 40 80 120 160 200
Gate Charge Qg (nc)
10,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
100
Crss
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
td (off)
200
100 tf
tr
50 td (on)
20
10
VGS = 10 V
VDD
=•
•
30
V
PW = 2 µs, duty < 1%
5
0.5 1
2
5 10 20
Drain Current ID (A)
50
6
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ K1518 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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K1518 | MOSFET ( Transistor ) - 2SK1518 | Hitachi Semiconductor |