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PDF B772P Data sheet ( Hoja de datos )
| Número de pieza | B772P | |
| Descripción | -30V, -3A, PNP Transistor, 2SB772 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
PNP SILICON POWER TRANSISTOR
2SB772
PNP SILICON POWER TRANSISTOR
DESCRIPTION
The 2SB772 is PNP silicon transistor suited for the output stage of 3
W audio amplifier, voltage regulator, DC-DC converter and relay
driver.
FEATURES
• Low saturation voltage
VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A)
• Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = −2 V, IC = −1 A)
• Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±0.2
2.8 MAX.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
Junction Temperature
Maximum Power Dissipation
−55 to +150°C
150°C Maximum
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Maximum Voltages and Currents (TA = 25°C)
VCBO
Collector to Base Voltage
VCEO
Collector to Emitter Voltage
VEBO
Emitter to Base Voltage
IC(DC)
Collector Current (DC)
IC(pulse)Note Collector Current (pulse)
Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%
1.0 W
10 W
−40 V
−30 V
−5.0 V
−3.0 A
−7.0 A
12 TYP.
0.55
+0.08
–0.05
0.8
+0.08
–0.05
2.3 TYP.
2.3 TYP.
1.2 TYP.
1: Emitter
2: Collector: connected to mounting plane
3: Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
DC Current Gain
hFE1
VCE = −2.0 V, IC = −20 mANote
DC Current Gain
hFE2
VCE = −2.0 V, IC = −1.0 mANote
Gain Bandwidth Product
fT VCE = −5.0 V, IC = −0.1 A
Output Capacitance
Cob VCB = −10 V, IE = 0, f = 1.0 MHz
Collector Cutoff Current
ICBO VCB = −30 V, IE = 0 A
Emitter Cutoff Current
IEBO VEB = −3.0 V, IC = 0 A
Collector Saturation Voltage
VCE(sat)
IC = −2.0 A, IB = −0.2 ANote
Base Saturation Voltage
VBE(sat)
IC = −2.0 A, IB = −0.2 ANote
Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2%
MIN.
30
60
TYP.
220
160
80
55
−0.3
−1.0
MAX.
400
−1.0
−1.0
−0.5
−2.0
UNIT
MHz
pF
µA
µA
V
V
CLASSIFICATION OF hFE
Rank
Range
R
60 to 120
Q
100 to 200
P
160 to 320
Remark Test Conditions: VCE = −2.0 V, IC = 1.0 A
E
200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17118EJ2V0DS00 (2nd edition)
(Previous No. TC-3569)
Date Published March 2004 N CP(K)
Printed in Japan
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| PDF Descargar | [ Datasheet B772P.PDF ] | |
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