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PDF IXFX150N15 Data sheet ( Hoja de datos )
| Número de pieza | IXFX150N15 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
Single MOSFET Die
Preliminary data sheet
IXFK 150N15
IXFX 150N15
VDSS = 150 V
ID25 = 150 A
=RDS(on) 12.5 mW
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
I
DM
IAR
E
AR
EAS
dv/dt
P
D
TJ
TJM
T
stg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C (MOSFET chip capability)
External lead (current limit)
T
C
= 25°C, Note 1
TC = 25°C
T
C
= 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V
DSS
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
150 V
150 V
±20 V
±30 V
150 A
76 A
600 A
150 A
60 mJ
3J
5 V/ns
560 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.9/6 Nm/lb.in.
6g
10 g
PLUS 247TM
(IXFX)
G
D
TO-264 AA (IXFK)
D (TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
V = 0 V, I = 3mA
GS D
V = V , I = 8mA
DS GS D
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
150 V
2.0 4.0 V
±100 nA
TJ = 25°C
TJ = 125°C
100 mA
2 mA
12.5 mW
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
Advantages
• PLUS 247TMpackage for clip or spring
mounting
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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