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PDF IXFH15N100Q Data sheet ( Hoja de datos )
| Número de pieza | IXFH15N100Q | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,High dv/dt
IXFH 15N100Q
IXFK 15N100Q
IXFT 15N100Q
VDSS = 1000 V
ID25 = 15 A
RDS(on) =
0.7 Ω
trr ≤ 250 ns
Preliminary data sheet
TO-247 AD (IXFH)
Symbol
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
TL
M
d
Weight
Symbol
VDSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
T
C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T
J
≤
150°C,
R
G
=
2
Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
1000
1000
±20
±30
15
60
15
V
V
V
V
A
A
A
45 mJ
1.5 J
5 V/ns
360
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Mounting torque
TO-247
TO-264
TO-247
TO-268
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6g
4g
10 g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1000
3.0
V
5.0 V
±200 nA
50 µA
2 mA
0.7 Ω
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
(TAB)
G
D
S
D (TAB)
G = Gate
S = Source
TAB = Drain
Features
z IXYS advanced low Qg process
z International standard packages
z Epoxy meet UL 94 V-0, flammability
classification
z Low RDS (on) low Qg
z Avalanche energy and current rated
z Fast intrinsic rectifier
Advantages
z Easy to mount
z Space savings
z High power density
© 2001 IXYS All rights reserved
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