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IRFP340 の電気的特性と機能

IRFP340のメーカーはIntersil Corporationです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFP340
部品説明 N-Channel Power MOSFET / Transistor
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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IRFP340 Datasheet, IRFP340 PDF,ピン配置, 機能
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Data Sheet
IRFP340
July 1999 File Number 2088.3
11A, 400V, 0.550 Ohm, N-Channel
Power MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17424.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP340
TO-247
IRFP340
NOTE: When ordering, include the entire part number.
Features
• 11A, 400V
• rDS(ON) = 0.550
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
Packaging
S
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JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
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4-329
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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IRFP340 pdf, ピン配列
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IRFP340
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN TYP
--
--
MAX
11
44
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 11A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 10A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 10A, dISD/dt = 100A/µs
--
170 370
1.6 3.8
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 7.0mH, RG = 50, peak IAS = 11A.
2.0
790
8.2
V
ns
µC
Typical Performance Curves Unless Otherwise Specified
1.2 15
1.0
12
0.8
9
0.6 www.DataShee6 t4U.com
0.4
3
0.2
0
0 50 100
TC , CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
10-2 0.01
SINGLE PULSE
10-3
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2t2
NOTES:
DUTY FACTOR: D = t1/t2
TJ = PDM x ZθJC x RθJC + TC
1 10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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IRFP340 電子部品, 半導体
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Test Circuits and Waveforms
IRFP340
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON tOFF
td(ON)
td(OFF)
tr tf
RL VDS
90%
90%
wRG ww.Dat-+VaDD She0et4U10%.com
10%
VGS
DUT
VGS
10%
0
50%
PULSE WIDTH
90%
50%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
CURRENT
REGULATOR
12V
BATTERY
0.2µF 50k
0.3µF
VDS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
D
G DUT
Ig(REF)
0
S
VDS
IG CURRENT
SAMPLING
ID CURRENT
SAMPLING
RESISTOR
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
Ig(REF)
0
FIGURE 20. GATE CHARGE WAVEFORMS
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共有リンク

Link :


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