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PDF IRFP350 Data sheet ( Hoja de datos )
| Número de pieza | IRFP350 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
IRFP350
July 1999 File Number 2319.4
16A, 400V, 0.300 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17434.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP350
TO-247
IRFP350
NOTE: When ordering, include the entire part number.
Features
• 16A, 400V
• rDS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
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Packaging
JEDEC STYLE TO-247
TOP VIEW
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DataSheet4 U .com
4-335
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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1 page  
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IRFP350
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
5000
4000
3000
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS
COSS
=
≈
CGD
CDS
+
CGS
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2000
1000
COSS
CRSS
0
12
5 10 2
5 102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS = 2 x VGS
20
15
TJ = 25oC
102
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
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TJ = 150oC
TJ = 150oC
1
TJ = 25oC
5
0
0
5
10 15
20 25
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0.1
0
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
20
ID = 16A
16
12
8
VDS = 80V
VDS = 200V
VDS = 320V
4
0
0 30 60 90 120 150
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFP350.PDF ] | |
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