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Número de pieza | IRFP350A | |
Descripción | Advanced Power MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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IRFP350A
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
♦ Low RDS(ON): 0.254Ω (Typ.)
Absolute Maximum Ratings
BVDSS = 400 V
RDS(on) = 0.3Ω
ID = 17 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Symbol
Characteristic
Value
VDSS
Drain-to-Source Voltage
400
ID
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
17
10.8
IDM Drain Current-Pulsed
(1) 68
VGS Gate-to-Source Voltage
±30
EAS
Single Pulsed Avalanche Energy
(2)
1156
IAR Avalanche Current
(1) 17
EAR
www.DataSheet4U.comdv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(1)
(3)
20.2
4.0
PD
Total Power Dissipation (TC=25°C)
Linear Derating Factor
202
1.61
TJ , TSTG
Operating Junction and
Storage Temperature Range
- 55 to +150
Maximum Lead Temp. for Soldering
TL Purposes, 1/8 from case for 5-seconds
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.62
--
40
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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IRFP350A
Fig 12. Gate Charge Test Circuit & Waveform
Current Regulator
Same Type
50kΩ as DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
DUT
3mA
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Qg
Qgd
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
Vout
Vin
RG
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
10%
www.DataSheet4U.com10V
Vin
td(on)
tr
td(off)
tf
t on t off
Vary tp to obtain
required peak ID
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
10V
RG
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time
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5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRFP350A.PDF ] |
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