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1C5819C PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 1C5819C
部品説明 (1C5819A - 1C5819C) Silicon Schottky Rectifier DIE
メーカ Sensitron
ロゴ Sensitron ロゴ 

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1C5819C Datasheet, 1C5819C PDF,ピン配置, 機能
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SENSITRON
SEMICONDUCTOR
1C5819A/B/C
TECHNICAL DATA
DATA SHEET 676, REV. -
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Max. Junction Temperature
Max. Storage Temperature
Electrical Characteristics:
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
TJ
Tstg
Condition
-
50% duty cycle, rectangular
wave form
8.3 ms, Sine pulse (1)
TJ = 25 °C, IAS = 0.18 A,
L = 160 mH
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
-
-
Max.
45
1
25
2.6
0.18
-55 to +125
-55 to +150
Units
V
A
A
mJ
A
°C
°C
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Max. Junction Capacitance
(1) in SHD package
Symbol
VF1
VF2
IR1
IR2
CT
Condition
@ 1A, Pulse, TJ = 25 °C
@ 1A, Pulse, TJ = 100 °C
@VR = 45V, Pulse,
TJ = 25 °C
@VR = 45V, Pulse,
TJ = 100 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
Max.
0.49
0.45
50
5.0
70
Units
V
V
µA
mA
pF
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com

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