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IRLZ34NSPBF の電気的特性と機能

IRLZ34NSPBFのメーカーはInternational Rectifierです、この部品の機能は「(IRLZ34NSPBF / IRLZ34NLPBF) Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLZ34NSPBF
部品説明 (IRLZ34NSPBF / IRLZ34NLPBF) Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLZ34NSPBF Datasheet, IRLZ34NSPBF PDF,ピン配置, 機能
www.DataSheet4U.com
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ34NS)
l Low-profile through-hole (IRLZ34NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ34NL) is available for low-
profile applications.
Absolute Maximum Ratings
G
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 95583
IRLZ34NSPbF
IRLZ34NLPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.035
ID = 30A
S
D 2 Pak
TO-262
Max.
30
21
110
3.8
68
0.45
±16
110
16
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
2.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/20/04

1 Page





IRLZ34NSPBF pdf, ピン配列
www.DataSheet4U.com
IRLZ34NS/LPbF
1000
100
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
1 2.5V
0.1
0.1
20µs PULSE WIDTH
TJ = 25°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
2.5V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 175°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
10
1
V DS= 25V
20µs PULSE WIDTH
0.1 A
2 3 4 5 6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0
ID = 27A
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRLZ34NSPBF 電子部品, 半導体
www.DataSheet4U.com
IRLZ34NS/LPbF
VDS
RG
5.0 V
tp
L
D.U.T.
IAS
0.01
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
5.0 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
250 I D
TOP
6.6A
11A
200 BOTTOM 16A
150
100
50
0 VDD = 25V
A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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部品番号部品説明メーカ
IRLZ34NSPBF

(IRLZ34NSPBF / IRLZ34NLPBF) Power MOSFET

International Rectifier
International Rectifier


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