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IRLZ34NのメーカーはInternational Rectifierです、この部品の機能は「55V Single N-channel HexFET Power MOSFET in a TO-220AB Package」です。 |
部品番号 | IRLZ34N |
| |
部品説明 | 55V Single N-channel HexFET Power MOSFET in a TO-220AB Package | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLZ34Nダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 9.1307B
IRLZ34N
HEXFET® Power MOSFET
D
VDSS = 55V
G RDS(on) = 0.035Ω
S ID = 30A
TO-220AB
Max.
30
21
110
68
0.45
±16
110
16
6.8
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.2
––––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
1 Page www.DataSheet4U.com
1000
100
V GS
TOP 15V
1 2V
1 0V
8 .0V
6 .0V
4 .0V
3 .0V
BOT TOM 2.5V
10
1 2.5V
0.1
0.1
20µs PULSE W IDTH
TJ = 25°C
A
1 10 100
VD S , Drain-to-S ource V oltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 2 5 ° C
TJ = 1 7 5° C
10
1
V DS= 25V
20µs P ULSE W ID TH
0.1 A
2 3 4 5 6 7 8 9 10
VGS , Ga te-to-So urce Voltage (V )
Fig 3. Typical Transfer Characteristics
IRLZ34N
1000
100
TOP
BOTT OM
V GS
15 V
1 2V
1 0V
8 .0 V
6 .0 V
4 .0 V
3 .0 V
2.5 V
10
2 .5V
1
0.1
0.1
20µs PULSE W IDTH
TJ = 175°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
ID = 27A
2.5
2.0
1.5
1.0
0.5
0.0
V GS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages www.DataSheet4U.com
IRLZ34N
VDS
RG
5.0 V
tp
L
D.U.T.
IAS
0.01Ω
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
5.0 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
250
ID
TOP 6.6A
11A
200 BOTTOM 16A
150
100
50
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 Page | |||
ページ | 合計 : 8 ページ | ||
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