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IRL2310 の電気的特性と機能

IRL2310のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRL2310
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRL2310 Datasheet, IRL2310 PDF,ピン配置, 機能
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PRELIMINARY
HEXFET® Power MOSFET
PD - 9.1275
IRL2310
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(on) Specified at VGS= 4.5V & 10V
175°C Operating Temperature
VDSS = 100V
RDS(on) = 0.040
ID = 40A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design for which HEXFET Power MOSFETs are well
known, provides the designer with an extremely efficient device for use in a
wide variety of application.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 5.0V
Continuous Drain Current, V GS @ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
40
29
160
170
1.1
±20
500
24
17
5.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
0.90
––––
62
Units
°C/W
Revision 1

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IRL2310 pdf, ピン配列
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IRL2310
D.U.T
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
RG dv/dt controlled by R G
Driver same type as D.U.T.
VDD
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS


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部品番号部品説明メーカ
IRL2310

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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