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PDF IRFP26N60L Data sheet ( Hoja de datos )
| Número de pieza | IRFP26N60L | |
| Descripción | SMPS MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 94611A
SMPS MOSFET
IRFP26N60L
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 210mΩ 170ns 26A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
26
17
100
470
Units
A
W
VGS
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
3.8 W/°C
±30 V
30 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 26
MOSFET symbol
D
(Body Diode)
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
www.irf.com
A showing the
––– ––– 100
integral reverse
G
––– ––– 1.5
fp-n junction diode.
V TJ = 25°C, IS = 26A, VGS = 0V
S
––– 170 250 ns TJ = 25°C, IF = 26A
f––– 210 320
TJ = 125°C, di/dt = 100A/µs
f––– 670 1000 nC TJ = 25°C, IS = 26A, VGS = 0V
f––– 1050 1570
TJ = 125°C, di/dt = 100A/µs
––– 7.3 11 A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
10/19/04
1 page  
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IRFP26N60L
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
30
25
20
10
100µsec
15
1 1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
10000
Fig 9. Maximum Safe Operating Area
10
5
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 10. Maximum Drain Current vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 11a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11b. Switching Time Waveforms
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5
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| PDF Descargar | [ Datasheet IRFP26N60L.PDF ] | |
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