(PDF) ST2302 Datasheet - N Channel Enchancement Mode MOSFET

Número de pieza	ST2302
Descripción	N Channel Enchancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! www.DataSheet4U.com N Channel Enchancement Mode MOSFET 3.6A ST2302 DESCRIPTION The ST2302 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 3 D G S 12 1.Gate 2.Source 3.Drain 3 S02YA FEATURE z 20V/3.6A, RDS(ON) = 80m-ohm @VGS = 4.5V z 20V/2.4A, RDS(ON) = 95m-ohm @VGS = 2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design 12 S: Subcontractor Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 1 page www.DataSheet4U.com N Channel Enchancement Mode MOSFET 3.6A TYPICAL CHARACTERISTICS ST2302 Page 5 5 Page

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PDF ST2302 Data sheet ( Hoja de datos )