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C5121 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 C5121
部品説明 2SC5121
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 

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C5121 Datasheet, C5121 PDF,ピン配置, 機能
Power Transistors
www.datasheet4u.com
2SC5121
Silicon NPN triple diffusion planar type
For general amplification
Features
High collector-base voltage (Emitter open) VCBO
High collector-emitter voltage (Base open) VCEO
Small collector output capacitance (Common base, input open
circuited) Cob
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
400
400
7
70
100
1.2
150
55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
400
V
Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
7V
Collector-base cutoff current (Emitter open) ICBO VCB = 300 V, IE = 0
10 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 380 V, IB = 0, Ta = 80°C
10 µA
Forward current transfer ratio *
hFE VCE = 10 V, IC = 5 mA
30 100
Collector-emitter saturation voltage * VCE(sat) IC = 50 mA, IB = 5 mA
1.2 V
Transition frequency
fT VCB = 10 V, IE = −10 mA, f = 200 MHz 50 80
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
4 8 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00140BED
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