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STQ3NK50ZR-AP の電気的特性と機能

STQ3NK50ZR-APのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STQ3NK50ZR-AP
部品説明 N-CHANNEL MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STQ3NK50ZR-AP Datasheet, STQ3NK50ZR-AP PDF,ピン配置, 機能
www.DataSheet4U.com
STQ3NK50ZR-AP
STD3NK50Z - STD3NK50Z-1
N-CHANNEL 500V - 3.0- 2.3A TO-92/DPAK/IPAK
Zener-Protected SuperMESH™ MOSFET
TARGET SPECIFICATION
Table 1: General Features
Figure 1: Package
TYPE
VDSS RDS(on) ID
Pw
STQ3NK50ZR-AP
STD3NK50Z
STD3NK50Z-1
500 V
500 V
500 V
3.5
3.5
3.5
0.5 A
2.3 A
2.3 A
s TYPICAL RDS(on) = 3.0
s EXTREMELY HIGH dv/dt CAPABILITY
s ESD IMPROVED CAPABILITY)
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
3W
45 W
40 W
TO-92 (Ammopak)
3
1
DPAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme opyimization of ST’s well established strip
based PowerMESH™ layout. In addition to push-
ing on-resistance significatly down, special care is
taken to ensure a very good dv/dt capability for the
most demanding application. Such series comple-
ments ST full range of high voltage MOSFETs
icluding revolutionary MDmesh™ products
3
2
1
IPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
s AC ADAPTORS AND BATTERY CHARGERS
s SWITH MODE POWER SUPPLIES (SMPS)
s LIGHTING
Table 2: Order Coder
SALES TYPE
STQ3NK50ZR-AP
STD3NK50Z
STD3NK50Z-1
MARKING
Q3NK50ZR
D3NK50Z
D3NK50Z
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PACKAGE
TO-92
DPAK
IPAK
PACKAGING
AMMOPAK
TAPE & REEL
TUBE
Rev. 1
July 2004
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
1/11

1 Page





STQ3NK50ZR-AP pdf, ピン配列
www.DataSheet4U.com STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1 µA
50 µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10 µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3 3.75 4.5 V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.2 A
3.0 3.5
Table 8: Dynamic
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID = 1.0 A
1.5 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
280
40
8
pF
pF
pF
Coss eq. (3) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400 V
TBD
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 250 V, ID = TBD A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
TBD
TBD
TBD
TBD
ns
ns
ns
ns
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 400 V, ID = 2.0 A,
VGS = 10V
11
TBD
TBD
15
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
2.3 A
9.2 A
VSD (1) Forward On Voltage
ISD = 2.0 A, VGS = 0
1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =2.0 A, di/dt = 100 A/µs
VDD = 20V, Tj = 25°C
(see test circuit, Figure 5)
TBD
TBD
TBD
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =2.0A, di/dt = 100 A/µs
VDD = 20V, Tj = 25°C
(see test circuit, Figure 5)
TBD
TBD
TBD
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
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3/11


3Pages


STQ3NK50ZR-AP 電子部品, 半導体
STD3NK50Zwww.DataSheet4U.com - STD3NK50Z-1 - STQ3NK50ZR-AP
DIM.
A
A1
A3
B
B2
B3
B5
B6
C
C2
D
E
G
H
L
L1
L2
TO-251 (IPAK) MECHANICAL DATA
MIN.
2.2
0.9
0.7
0.64
5.2
0.45
0.48
6
6.4
4.4
15.9
9
0.8
mm
TYP.
0.3
0.8
MAX.
2.4
1.1
1.3
0.9
5.4
0.85
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
MIN.
0.086
0.035
0.027
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
inch
TYP.
0.012
0.031
H
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
L2 D
L
L1
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6/11
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部品番号部品説明メーカ
STQ3NK50ZR-AP

N-CHANNEL MOSFET

ST Microelectronics
ST Microelectronics


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