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STQ1NK60ZRのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL MOSFET」です。 |
部品番号 | STQ1NK60ZR |
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部品説明 | N-CHANNEL MOSFET | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTQ1NK60ZRダウンロード(pdfファイル)リンクがあります。 Total 18 pages
STN1NK60Z,
STQ1NK60ZR
N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH™
Power MOSFETs in SOT-223 and TO-92 packages
Datasheet - production data
Features
4
3
2
1
SOT-223
TO-92 (Ammopak)
Figure 1. Internal schematic diagram
D(2,4)
G(1)
S(3)
AM01476v1
Order codes
VDS RDS(on)max ID PTOT
STN1NK60Z
600 V
STQ1NK60ZR-AP
15 Ω
3.3 W
0.3 A
3W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• ESD improved capability
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Order codes
STN1NK60Z
STQ1NK60ZR-AP
Table 1. Device summary
Marking
Package
1NK60Z
1NK60ZR
SOT-223
TO-92
Packaging
Tape and reel
Ammopak
July 2014
This is information on a product in full production.
DocID9509 Rev 14
1/18
www.st.com
1 Page STN1NK60Z, STQ1NK60ZR
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
SOT-223
TO-92
VDS
VGS
ID
ID
IDM(1)
PTOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
600
± 30
0.3
0.189
1.2
3.3 3
0.026
0.024
ESD
dv/dt(2)
Human body model
C=100 pF, R=1.5 kΩ
Peak diode recovery voltage slope
TJ Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 0.3 A, di/dt ≤ 200 A/µs, VDD = 80%V(BR)DSS
800
4.5
- 55 to 150
Table 3. Thermal resistance
Symbol
Parameter
Value
SOT-223
TO-92
Rthj-amb Thermal resistance junction-ambient max
Rthj-lead Thermal resistance junction-lead max
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu, t < 30 s.
38(1)
120
40
Symbol
IAR
EAS
Table 4. Avalanche data
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Value
0.3
60
Unit
V
V
A
A
A
W
W/°C
V
V/ns
°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
DocID9509 Rev 14
3/18
18
3Pages Electrical characteristics
STN1NK60Z, STQ1NK60ZR
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for SOT-223
Figure 3. Thermal impedance for SOT-223
K
δ=0.5
SOT-223
Figure 4. Safe operating area for TO-92
0.2
0.1
10-1
0.05
0.02
0.01
Single pulse
10-2
10-3
10-2
10-1
t < 30s
Zthj-pcb=K*Rthj-pcb,
Rthj-pcb=62.5°C/W
100 101 102 tp(s)
Figure 5. Thermal impedance for TO-92
Figure 6. Output characteristics
Figure 7. Transfer characteristics
6/18 DocID9509 Rev 14
6 Page | |||
ページ | 合計 : 18 ページ | ||
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部品番号 | 部品説明 | メーカ |
STQ1NK60ZR | N-CHANNEL MOSFET | ST Microelectronics |
STQ1NK60ZR | N-CHANNEL MOSFET | STMicroelectronics |