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PDF STQ1NE10L Data sheet ( Hoja de datos )
| Número de pieza | STQ1NE10L | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
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STQ1NE10L
N-CHANNEL 100V - 0.3 Ω - 1A TO-92
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STQ1NE10L
100 V
<0.4 Ω
1A
s TYPICAL RDS(on) = 0.3 Ω
s EXCEPTIONAL HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s AVALANCHE RUGGED TECHNOLOGY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
TO-92
TO-92
(Ammopack)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot(1)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
EAS (3) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(1) Related to Rthj -l
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.
Value
Unit
100 V
100 V
± 16 V
1A
0.6 A
4A
3W
0.025
W/°C
6 V/ns
400 mJ
-55 to 150
°C
°C
(2) ISD ≤1A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(3) Starting Tj = 25 oC, ID = 1A, VDD = 50V
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Normalized Gate Threshold Voltage vs Temperature
STQ1NE10L
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
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5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STQ1NE10L.PDF ] | |
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