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STQ-2016-3Z の電気的特性と機能

STQ-2016-3ZのメーカーはETCです、この部品の機能は「700-2500 MHz Direct Quadrature Modulator」です。


製品の詳細 ( Datasheet PDF )

部品番号 STQ-2016-3Z
部品説明 700-2500 MHz Direct Quadrature Modulator
メーカ ETC
ロゴ ETC ロゴ 




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STQ-2016-3Z Datasheet, STQ-2016-3Z PDF,ピン配置, 機能
www.DataSheet4U.com
Product Description
The Sirenza Microdevices STQ-2016-3 is a direct quadrature
modulator targeted for use in W-CDMA applications. This
device features a 700-2500 MHz operating frequency band,
excellent carrier and sideband suppression, and a low broad-
band noise floor.
STQ-2016-3
STQ-2016-3Z Pb RoHS Compliant
& Green Package
700-2500 MHz Direct Quadrature Modulator
The STQ-2016-3 uses silicon germanium (SiGe) device
technology and delivers a typical channel power of -11 dBm
with adjacent channel power less than -65 dBc. A digital
input shut-down feature is included that, when enabled,
attenuates the output by 60 dB. The device is packaged in an
industry standard 16 pin TSSOP with exposed paddle for
superb RF and thermal ground. The STQ-2016-3Z is pack-
aged in a RoHs compliant and Green 16-pin TSSOP with
matte tin finish.
Functional Block Diagram
BBQP 1
16 BBQN
VCC 2
15 VCC
VEE 3
14 VEE
LOP 4
LON 5
LO
QUADRATURE
GENERATOR
13 RFP
12 RFN
VEE 6
11 VEE
16 pin TSSOP with Exposed Ground Pad
Package Footprint: 0.197 x 0.252 inches, (5.0 x 6.4 mm)
Package Height: 0.039 inches (1.0 mm)
Product Features
Excellent carrier feedthrough, -40 dBm constant
with output power
+4.0 dBm output P1dB
Wide baseband input, DC - 500 MHz
Superb phase accuracy and amplitude balance,
±0.5 deg./±0.2 dB
Very low noise floor, -157 dBm/Hz
Low ACP, -65 dBc
SD 7
BBIP 8
10 VCC
9 BBIN
Applications
W-CDMA Transmitters
Product Specifications – W-CDMA Modulation (See Table 1 for Test Conditions)
869-894 MHz
1930-1990 MHz
Parameters
Comments
Unit Min. Typ. Max. Min. Typ. Max.
Channel Power
Guaranteed through
Output Power test as
specified on Page 2
dBm
-13 -11
-9 -14.5 -12.5 -10.5
Power Flatness
Range across fre-
quency band
dB
0.25 0.5
0.25 0.5
Adjacent Channel Power
Guaranteed through
IM3 test as specified
on Page 2
dBc
-65 -63
-65 -63
First Alternate Channel
Power
dBc
-75 -68
-73 -68
Second Alternate Channel
Power
dBc
-75 -68
-73 -68
Broadband Noise Floor
60 MHz offset from
carrier
dBm/Hz
-157 -156
-157 -156
Signal-to-Noise Ratio
Noise Offset: 60 MHz,
Measured in a 3.84 MHz
bandwidth
dB
79 81
77 79
2110-2170 MHz
Min. Typ. Max. Type*
-15 -13 -11
E
0.25 0.5 C,D
-65 -63 E
-73 -68 C,D
-73 -68 C,D
-156 -155 C,D
76 78
C,D
*Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature
and Vcc, D = Design parameter, E = 100% tested through correlated CW parameter, I = Device input specification.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice.
No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in
life-support devices and/or systems.
www.DataSheet4U.comCopyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-104229 Rev B

1 Page





STQ-2016-3Z pdf, ピン配列
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Product Specifications – LO Input
STQ-2016-3 Direct Quadrature Modulator
Parameters
LO Frequency
LO Drive Level
LO Port Return Loss
Additional Test Conditions/Comments
Recommended/Optimum Levels
matched to 50(see schematic on page
12)
Unit
MHz
dBm
dB
Min.
700
-1
Typ.
+3
Max. Type*
2500 I
+7 I
16 D
Product Specifications – Shut-Down Input (Pin 7)
Parameters
Shut-Down Current
Shut-Down Attenuation
Shut-Down Pin Resistance
Shut-Down Pin Capacitance
Shut-down Control
Voltage Thresholds
Shut-Down Settling Time
Additional Test Conditions/Comments
@ 1MHz
@ 1MHz
Shut-down disabled (normal operation)
Shut-down enabled
Unit
mA
dB
kohm
pF
V
V
ns
Min.
3.75
0.0
Typ.
42
60
11.9
5.2
<450
Max.
60
Vcc
1.5
Type*
A
D
D
D
I
I
D
Product Specifications – Baseband Modulation Input
Parameters
Baseband Frequency Input
Baseband Input Resistance
Baseband Input Capacitance
Additional Test Conditions/Comments Unit
-3dB bandwidth, baseband inputs termi-
nated in 50 ohms
MHz
per pin
kohms
per pin
pF
Min.
DC
Typ.
4.4
0.5
Max. Type*
500 I
D
D
*Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature
and Vcc, D = Design parameter, E = 100 % tested through correlated CW parameter, I = Device input specification.
**Peak-to-Peak Differential (Vpp, Diff.) Baseband Voltage Definition:
1.5
1
Vpp
0.5
Vp
0
0.5
1 Vpp , Diff 2Vpp
1.5
0
100 200 300 400 500 600 700 800
Sa mp les
Plot of Single-Ended W-CDMA Baseband Signal (BBIP)
www.D303aSt.aTeSchhnoeloegytC4oUurt,.Bcrooommfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-104229 Rev B


3Pages


STQ-2016-3Z 電子部品, 半導体
www.DataSheet4U.com
Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH,
STQ-2016-3 Direct Quadrature Modulator
Peak-to-Average Ratio = 10.54
Signal-to-Noise Ratio
14 9
14 7
14 5
14 3
14 1
13 9
13 7
13 5
6
4 20 2
LO Drive Level (dBm)
I/Q Drive = 1 Vpp, D iff.
I/Q Drive = 2 Vpp, D iff.
I/Q Drive = 3 Vpp, D iff.
I/Q Drive = 4 Vpp, D iff.
4
6
Figure 7. Signal-to-Noise Ratio Vs. LO Drive Level, LO
Frequency = 2140 MHz.
8
14 9
14 7
14 5
14 3
14 1
13 9
13 7
13 5
1
1.5 2 2.5 3
IQ Drive Level (V pp, Diff.)
LO D rive = -5 dBm
LO D rive = -2 dBm
LO D rive = -1 dBm
LO D rive = +4 dB m
LO D rive = +7 dB m
3.5
Figure 8. Signal-to-Noise Ratio Vs. I/Q Drive Level, LO
Frequency = 2140 MHz.
4
145 145
144 144
143 143
142 142
1 41
4 .7
4.8 4.9
5
Vcc (Vdc)
I/Q Drive = 1.5 Vpp, Diff.
I/Q Drive = 1.7 Vpp, Diff.
I/Q Drive = 1.9 Vpp, Diff.
5 .1
5 .2
Figure 9. Signal-to-Noise Ratio Vs. Vcc, LO Drive = +4.0
dBm @ 2140 MHz.
1 41
1 .4
1.5 1.6 1.7 1.8
IQ Drive Level (Vpp, Diff.)
Vcc = 4.75 V
Vcc = 5.00 V
Vcc = 5.25 V
1 .9
Figure 10. Signal-to-Noise Ratio Vs. I/Q Drive Level, over Vcc
Range, LO Drive = +4.0 dBm @ 2140 MHz.
146 146
145 145
144 144
143 143
142 142
1 41
50
25 0
25 50
Temperature (Deg. C)
I/Q Drive = 1.5 Vpp, Diff.
I/Q Drive = 1.7 Vpp, Diff.
I/Q Drive = 1.9 Vpp, Diff.
75 100
1 41
1 .4
1.5 1.6 1.7 1.8
IQ Drive Level (Vpp, Diff.)
Temp = -40 Deg. C
Temp = +25 Deg. C
Temp = +85 Deg. C
1 .9
Figure 11. Signal-to-Noise Ratio Vs. Temperature, LO
Drive = +4.0 dBm @ 2140 MHz.
Figure 12. Signal-to-Noise Ratio Vs. I/Q Drive Level, over
Temperature, LO Drive = +4.0 dBm @ 2140 MHz.
www.D303aSt.aTeSchhnoeloegytC4oUurt,.Bcrooommfield, CO 80021
Phone: (800) SMI-MMIC
6
http://www.sirenza.com
EDS-104229 Rev B

6 Page



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部品番号部品説明メーカ
STQ-2016-3

700-2500 MHz Direct Quadrature Modulator

ETC
ETC
STQ-2016-3Z

700-2500 MHz Direct Quadrature Modulator

ETC
ETC


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