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HN29V25611ABP の電気的特性と機能

HN29V25611ABPのメーカーはHitachiです、この部品の機能は「256M AND Type Flash Memory」です。


製品の詳細 ( Datasheet PDF )

部品番号 HN29V25611ABP
部品説明 256M AND Type Flash Memory
メーカ Hitachi
ロゴ Hitachi ロゴ 




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HN29V25611ABP Datasheet, HN29V25611ABP PDF,ピン配置, 機能
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HN29V25611ABP Series
256M AND type Flash Memory
More than 16,057-sector (271,299,072-bit)
ADE-203-1281 (Z)
Preliminary
Rev. 0.0
Aug. 10, 2001
Description
The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It
has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V25611A are more than 16,057 (98% of all
sector address) and less than 16,384 sectors.
Features
On-board single power supply (VCC): VCC = 2.7 V to 3.6 V
Organization
AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 1.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
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Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.

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HN29V25611ABP pdf, ピン配列
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Pin Arrangement
HN29V25611ABP Series
72-bump CSP
1 2 3 4 5 6 7 8 9 10 11 12
A NC NC
NC I/O3 I/O1 SC VSS VCC NC NC NC
NC
B
VCC
I/O2
RDY
I/O0 /Busy
NC
NC
NC
NC
C VSS I/O4 OE RES NC NC NC NC
D I/O7 I/O6 I/O5 NC NC NC NC NC
E CE WE CDE NC NC NC NC NC
F
VSS
VSS
NC
NC
NC
NC
NC
NC
G NC NC NC NC NC NC NC NC
H NC NC NC NC NC NC NC NC NC NC NC NC
(Top view)
Note: 1. Two pins of 4 corners are connected.
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HN29V25611ABP 電子部品, 半導体
HN29V25611ABP Serieswww.DataSheet4U.com
Memory Map and Address
Sector address
3FFFH
3FFEH
3FFDH
2048 bytes
2048 bytes
2048 bytes
64 bytes
64 bytes
64 bytes
0002H
0001H
0000H
000H
2048 bytes
2048 bytes
2048 bytes
64 bytes
64 bytes
64 bytes
800H
83FH Column address
2048 + 64 bytes
Control bytes
Address
Cycles
I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7
Sector address SA (1): First cycle A0 A1 A2 A3 A4 A5 A6 A7
SA (2): Second cycle A8 A9 A10 A11 A12 A13 ×*2 ×
Column address CA (1): First cycle A0 A1 A2 A3 A4 A5 A6 A7
CA (2): Second cycle A8 A9 A10 A11 × × × ×
Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized
by reading the sector valid data written in a part of the column address 800 to 83F
(The specific address is TBD.). The sector valid data must be read and kept outside
of the sector before the sector erase. When the sector is programmed, the sector
valid data should be written back to the sector.
2. An × means "Don't care". The pin level can be set to either VIL or VIH, referred
to DC characteristics.
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部品番号部品説明メーカ
HN29V25611ABP

256M AND Type Flash Memory

Hitachi
Hitachi


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