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IRGBC40UのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRGBC40U |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.683A
IRGBC40U
UltraFast IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(sat) ≤ 3.0V
@VGE = 15V, IC = 20A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-220AB
Max.
600
40
20
160
160
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
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C-663
Min.
—
—
—
—
Typ.
—
0.50
—
2.0 (0.07)
Max.
0.77
—
80
—
Units
°C/W
g (oz)
Revision 0
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IRGBC40U
50
40
30 Square wave:
60% of rated
vo lta ge
20
For both:
D u ty cycle: 5 0%
TJ = 125°C
Tsink = 90°C
G a te d rive a s spe cified
P ow er D issip ation = 28 W
T riangular wave:
C lam p voltage:
8 0 % o f ra te d
10 Ideal diodes
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
1000
100 TJ = 25 °C
TJ = 150°C
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VC E , C ollector-to-E mitter V oltage (V )
Fig. 2 - Typical Output Characteristics
1000
100
TJ = 1 50 °C
TJ = 2 5°C
10
1
0.1
5
VCC = 100V
5µs PULSE W IDTH
10 15 20
VG E , G ate -to-E m itter V olta ge (V )
Fig. 3 - Typical Transfer Characteristics
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C-665
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IRGBC40U
6.0
RG = 10 Ω
TC = 150°C
5.0 VC C = 480V
VGE = 15V
4.0
3.0
2.0
1.0
0.0
0 10 20 30 40 50
IC , C ollecto r-to-Em itter C urrent (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
VGGEE= 20 V
TJ = 125°C
100
SAFE OP ER ATIN G AR EA
10
1
1 10 100 1000
VC E , C olle ctor-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1 - JEDEC Outline TO-220AB
Section D - page D-12
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C-668
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