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PDF IRGBC40F Data sheet ( Hoja de datos )
| Número de pieza | IRGBC40F | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.691A
IRGBC40F
Fast Speed IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(sat) ≤ 2.0V
@VGE = 15V, IC = 27A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-220AB
Max.
600
49
27
200
200
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
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C-63
Min.
—
—
—
—
Typ.
—
0.50
—
2.0 (0.07)
Max.
0.77
—
80
—
Units
°C/W
g (oz)
Revision 0
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IRGBC40F
3000
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
2500
Cres = C gc
Coes = Cce + C gc
Cies
2000
1500 Coes
1000
500 Cres
0
1 10 100
V C E , C ollector-to-E m itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 27A
16
12
8
4
0
0 10 20 30 40 50
Q g , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
60
4.8
VCC = 480V
VG E = 15V
TC = 25°C
4.7 IC = 27A
4.6
4.5
4.4
4.3
0
10 20 30 40 50 60
R G , Gate Resistance (Ω )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
100
R G = 10 Ω
V GE = 15V
V CC = 480V
10
I C = 54A
I C = 27A
I C = 14A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, C ase Tem perature (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
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C-67
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRGBC40F.PDF ] | |
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