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IXGH40N60 の電気的特性と機能

IXGH40N60のメーカーはIXYS Corporationです、この部品の機能は「High speed IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGH40N60
部品説明 High speed IGBT
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXGH40N60 Datasheet, IXGH40N60 PDF,ピン配置, 機能
Low VCE(sat) IGBT
High speed IGBT
IXGH/IXGM 40 N60
IXGH/IXGM 40 N60A
VCES
600 V
600 V
IC25
75 A
75 A
VCE(sat)
2.5 V
3.0 V
Symbol
Test Conditions
VCES
V
CGR
VGES
V
GEM
IC25
IC90
I
CM
SSOA
(RBSOA)
P
C
TJ
TJM
T
stg
Md
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
M
Continuous
Transient
TC = 25°C, limited by leads
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22
Clamped inductive load, L = 30 µH
T
C
= 25°C
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
40 A
150 A
ICM = 80
@ 0.8 VCES
250
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
BV
CES
VGE(th)
ICES
I
GES
V
CE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I
C
=
250
µA,
V
GE
=
0
V
IC = 250 µA, VCE = VGE
VCE = 0.8 • VCES
V =0V
GE
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C C90 GE
TJ = 25°C
T
J
=
125°C
40N60
40N60A
600
2.5
V
5V
200 µA
1 mA
±100 nA
2.5 V
3.0 V
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
G = Gate,
E = Emitter,
C
C = Collector,
TAB = Collector
Features
l International standard packages
l 2nd generation HDMOSTM process
l Low V
CE(sat)
- for low on-state conduction losses
l High current handling capability
l MOS Gate turn-on
- drive simplicity
l Voltage rating guaranteed at high
temperature (125°C)
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l High power density
© 1996 IXYS All rights reserved
91513E (3/96)

1 Page





IXGH40N60 pdf, ピン配列
Fig. 1 Saturation Characteristics
80
70
60
50
40
30
20
10
0
0
TJ = 25°C
1
VGE = 15V
13V
11V
9V
7V
5V
23
VCE - Volts
4
5
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9 TJ = 25°C
8
7
6
5
4
3
2 IC = 40A
1 IC = 20A
0
4 5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
Fig. 5 Input Admittance
80
VCE = 100V
70
60
50
40
30
20
TJ = 25°C
10
TJ = 125°C
0
0 1 2 3 4 5 6 7 8 9 10
VGE - Volts
© 1996 IXYS All rights reserved
IXGH 40N60 IXGM 40N60
IXGH 40N60A IXGM 40N60A
Fig. 2 Output Characterstics
350
VGE = 15V 13V
300 11V
250
200
9V
TJ = 25°C
150 7V
100
50
5V
0
0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
1.4 IC = 80A
1.3
1.2
1.1
IC = 40A
1.0
0.9 IC = 20A
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
VGE(th) @ 250µA
1.1
1.0
0.9
BVCES @ 3mA
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C


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共有リンク

Link :


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