|
|
PDF IS61VF25618A Data sheet ( Hoja de datos )
| Número de pieza | IS61VF25618A | |
| Descripción | (IS6xxFxxxxxA) Synchronous Flow-through Static RAM | |
| Fabricantes | ISSI | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IS61VF25618A (archivo pdf) en la parte inferior de esta página. Total 25 Páginas | ||
|
No Preview Available !
( DataSheet : www.DataSheet4U.com )
IS61(64)LF12832A IS64VF12832A
IS61(64)LF12836A IS61(64)VF12836A
IS61(64)LF25618A IS61(64)VF25618A
ISSI®
128K x 32, 128K x 36, 256K x 18
4 Mb SYNCHRONOUS FLOW-THROUGH
STATIC RAM
PRELIMINARY INFORMATION
AUGUST 2005
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
sion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• Power Supply
LF: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%
VF: VDD 2.5V -5% +10%, VDDQ 2.5V -5% +10%
• JEDEC 100-Pin TQFP, 119-pin PBGA, and
165-pin PBGA packages
• Automotive temperature available
• Lead-free available
FAST ACCESS TIME
Symbol
tKQ
tKC
Parameter
Clock Access Time
Cycle Time
Frequency
DESCRIPTION
The ISSI IS61(64)LF12832A, IS64VF12832A,
IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are
high-speed, low-power synchronous static RAMs designed
to provide burstable, high-performance memory for commu-
nication and networking applications. The
IS61(64)LF12832A is organized as 131,072 words by 32
bits. The IS61(64)LF/VF12836A is organized as 131,072
words by 36 bits. The IS61(64)LF/VF25618A is organized
as 262,144 words by 18 bits. Fabricated with ISSI's
advanced CMOS technology, the device integrates a 2-bit
burst counter, high-speed SRAM core, and high-drive
capability outputs into a single monolithic circuit. All syn-
chronous inputs pass through registers controlled by a
positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (BWE) input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW) is
available for writing all bytes at one time, regardless of the
byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the ADV (burst address ad-
vance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
-6.5 -7.5
6.5 7.5
7.5 8.5
133 117
Units
ns
ns
MHz
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
www.DataSheet4U.com
1
1 page  
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI®
119 BGA PACKAGE PIN CONFIGURATION
256KX18 (TOP VIEW)
1 2 3 4 5 67
A VDDQ
B NC
A
CE2
A ADSP A
A ADSC A
A
CE2
VDDQ
NC
C NC
A
A VDD A
A NC
D DQb
NC
Vss
NC
Vss DQPa NC
E NC
DQb
Vss
CE
Vss
NC DQa
F VDDQ
NC
Vss
OE
Vss
DQa
VDDQ
G NC
DQb
BWb
ADV
Vss
NC DQa
H DQb
NC
Vss
GW
Vss
DQa
NC
J VDDQ
VDD
NC
VDD
NC
VDD
VDDQ
K NC DQb Vss CLK Vss
NC DQa
L DQb
NC
Vss
NC
BWa
DQa
NC
M VDDQ
DQb
Vss
BWE
Vss
NC VDDQ
N DQb
NC
Vss
A1*
Vss
DQa
NC
P
NC
DQPb
Vss
A0*
Vss
NC DQa
R NC
A
MODE
VDD
NC
A NC
T NC
A
A NC A
A ZZ
U VDDQ
NC
NC
NC
NC
NC VDDQ
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE, CE2, CE2
BWx (x=a,b)
BWE
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write Controls
Byte Write Enable
Symbol
OE
ZZ
MODE
NC
DQa-DQb
DQPa-Pb
VDD
VDDQ
Vss
Pin Name
Output Enable
Power Sleep Mode
Burst Sequence Selection
No Connect
Data Inputs/Outputs
Output Power Supply
Power Supply
Output Power Supply
Ground
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
5
5 Page 
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
INTERLEAVED BURST ADDRESS TABLE (MODE = VDD or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00 01 10 11
01 00 11 10
10 11 00 01
11 10 01 00
ISSI®
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
TSTG
Storage Temperature
PD Power Dissipation
IOUT Output Current (per I/O)
VIN, VOUT Voltage Relative to Vss for I/O Pins
VIN Voltage Relative to Vss for
for Address and Control Inputs
VDD Voltage on VDD Supply Relative to Vss
Value
–55 to +150
1.6
100
–0.5 to VDDQ + 0.5
–0.5 to VDD + 0.5
Unit
°C
W
mA
V
V
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
11
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet IS61VF25618A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IS61VF25618A | (IS6xxFxxxxxA) Synchronous Flow-through Static RAM | ISSI |
| IS61VF25618EC | SYNCHRONOUS FLOW-THROUGH SRAM | ISSI |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |