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Datasheet P36NE06 PDF ( 特性, スペック, ピン接続図 )

部品番号 P36NE06
部品説明 STP36NE06
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 
プレビュー
Total 9 pages
		
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P36NE06 Datasheet, P36NE06 PDF,ピン配置, 機能
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STP36NE06
® STP36NE06FP
N - CHANNEL 60V - 0.032- 36A - TO-220/TO-220FP
STripFETPOWER MOSFET
TYPE
STP36NE06
STP36NE06FP
VDSS
60 V
60 V
RDS(on)
< 0.040
< 0.040
s TYPICAL RDS(on) = 0.032
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
ID
36 A
20 A
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
July 1998
Value
Unit
STP36NE06 STP36NE06FP
60 V
60 V
± 20
V
36 20 A
24 14 A
144 144 A
100
0.66
35
0.27
W
W/oC
2000
V
7 V/ns
-65 to 175
oC
175 oC
(1) ISD 36 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
1/9
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1 Page



P36NE06 pdf, ピン配列
STP36NE06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V
RG =4.7
VDD = 48 V
RG = 4.7
VDD = 48 V
ID = 18 A
VGS = 10 V
ID = 36 A
VGS =10 V
ID = 36 A VGS = 10 V
Min.
Typ.
28
85
250
50
13
18
Max.
40
115
70
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 36 A
RG =4.7 VGS = 10 V
Min.
Typ.
12
25
40
Max.
16
35
55
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 36 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 36 A
VDD = 30 V
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
36
144
Unit
A
A
1.5
75
245
6.5
V
ns
µC
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9


3Pages


P36NE06 電子部品, 半導体
STP36NE06FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9

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