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STP10NK60ZFPのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL Power MOSFET」です。 |
部品番号 | STP10NK60ZFP |
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部品説明 | N-CHANNEL Power MOSFET | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTP10NK60ZFPダウンロード(pdfファイル)リンクがあります。 Total 18 pages
( DataSheet : www.DataSheet4U.com )
STB10NK60Z/-1 - STP10NK60Z/FP
STW10NK60Z
N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STB10NK60Z
STB10NK60Z-1
STP10NK60ZFP
STP10NK60Z
STW10NK60Z
600 V
600 V
600 V
600 V
600 V
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
ID
10 A
10 A
10 A
10 A
10 A
Pw
115
115
35
115
156
■ TYPICAL RDS(on) = 0.65 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
■ LIGHTING
Sales Type
STB10NK60Z-1
STB10NK60ZT4
STP10NK60ZFP
STP10NK60Z
STW10NK60Z
Marking
B10NK60Z-1
B10NK60Z
P10NK60ZFP
P10NK60Z
W10NK60Z
Package
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
3
1
D²PAK
123
I²PAK
Internal schematic diagram
Package
I²PAK
D²PAK
TO-220FP
TO-220
TO-247
Packaging
TUBE
TAPE & REEL
TUBE
TUBE
TUBE
September 2005
www.DataSheet4U.com
www.DRaetavS7heet4U.com
1/18
www.st.com
18
1 Page STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj=25°C, ID=IAR, VDD= 50V)
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max)
Table 4. Gate-source zener diode
Symbol
Parameter
Test Conditions
BVGSO
Gate-Source
Igs=±1mA
Breakdown Voltage (Open Drain)
Min.
30
Max Value
9
300
3.5
Typ.
1 Electrical ratings
Unit
A
mJ
mJ
Max.
Unit
V
1.1 PROTECTION FEATURES OF GATE-TO-SOURCE ZENER
DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
3/18
3Pages 2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2.1 Typical characteristics
Figure 1. Safe Operating Area for
TO-220/D²/I²PAK
Figure 2. Thermal Impedanc for
TO-220/D²/I²PAK
Figure 3. Safe Operating Area for TO-220FP Figure 4. Thermal Impedance for TO-220FP
Figure 5. Safe Operating Area for TO-247
Figure 6. Thermal Impedance for TO-247
6/18
6 Page | |||
ページ | 合計 : 18 ページ | ||
|
PDF ダウンロード | [ STP10NK60ZFP データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STP10NK60ZFP | N-CHANNEL Power MOSFET | ST Microelectronics |