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STP10NB50FP の電気的特性と機能

STP10NB50FPのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP10NB50FP
部品説明 N-CHANNEL Power MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP10NB50FP Datasheet, STP10NB50FP PDF,ピン配置, 機能
( DataSheet : www.DataSheet4U.com )
STP10NB50
® STP10NB50FP
N - CHANNEL 500V - 0.55- 10.6A - TO-220/TO-220FP
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
STP10NB50
500 V
STP10NB50FP 500 V
< 0.60
< 0.60
10.6 A
10.6 A
s TYPICAL RDS(on) = 0.55
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
3
2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Tstg
Insulation Withstand Voltage (DC)
Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
October 1999
Value
Unit
STP10NB50 STP10NB50FP
500 V
500 V
± 30
V
10.6
10.6(*)
A
6.4
6.4(*)
A
42.4
42.4
A
135
1.08
40
0.32
W
W/oC
4.5 4.5 V/ns
2000
-65 to 150
150
(1) ISD 10.6 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V
oC
oC
1/9
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1 Page





STP10NB50FP pdf, ピン配列
STP10NB50 STP10NB50FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 250 V ID = 5.3 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 160 V ID = 10 A VGS = 10 V
Min.
Typ.
25
13
Max.
14
20
Unit
ns
ns
38 49 nC
10 nC
17 nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 160 V ID = 10 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
13
15
25
Max.
11
14
28
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD =10.6 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD =10.6 A di/dt = 100 A/µs
VDD = 50 V Tj = 150 oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
10.6
42.4
Unit
A
A
560
4.9
17.5
1.6
V
ns
nC
A
Safe Operating Area
Safe Operating Area for TO-220FP
3/9


3Pages


STP10NB50FP 電子部品, 半導体
STP10NB50 STP10NB50FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9

6 Page



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共有リンク

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部品番号部品説明メーカ
STP10NB50FP

N-CHANNEL Power MOSFET

ST Microelectronics
ST Microelectronics


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