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IRFF9110 の電気的特性と機能

IRFF9110のメーカーはInternational Rectifierです、この部品の機能は「HEXFET TRANSISTORS THRU-HOLE (TO-205AF)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFF9110
部品説明 HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFF9110 Datasheet, IRFF9110 PDF,ピン配置, 機能
( DataSheet : www.DataSheet4U.com )
PD - 90388
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on)
IRFF9110 -100V 1.2
ID
-2.5A
IRFF9110
100V, P-CHANNEL
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
Units
-2.5
-1.6 A
-10
15 W
0.12
W/°C
±20 V
87 mJ
—A
— mJ
-5.5
-55 to 150
V/ns
oC
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
www.irf.com
1
01/23/01
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1 Page





IRFF9110 pdf, ピン配列
IRFF9110
Fig1. TypicalOutputCharacteristics
Fig2. TypicalOutputCharacteristics
Fig3. TypicalTransferCharacteristics
www.irf.com
Fig4. NormalizedOn-Resistance
Vs.Temperature
3


3Pages


IRFF9110 電子部品, 半導体
IRFF9110
VDS
L
RG
-1200VV
tp
D .U .T
IA S
0 .0 1
D R IV E R
VDD
A
15V
Fig12a. UnclampedInductiveTestCircuit
IAS
tp
V(BR)DSS
Fig12b. UnclampedInductiveWaveforms
-10V
QGS
VG
QG
QGD
Charge
Fig13a. BasicGateChargeWaveform
6
Fig12c. MaximumAvalancheEnergy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
-1122VV
.2µF
50K
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig13b. GateChargeTestCircuit
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFF9110

(IRFF9110 - IRFF9113) P-Channel Power MOSFET

International Rectifier
International Rectifier
IRFF9110

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

International Rectifier
International Rectifier
IRFF9110

Trans MOSFET P-CH 100V 2.5A 3-Pin TO-39

New Jersey Semiconductor
New Jersey Semiconductor
IRFF9110

Trans MOSFET P-CH 100V 2.5A 3-Pin TO-39

New Jersey Semiconductor
New Jersey Semiconductor


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